Dielectric function and band gap determination of single
crystal CuFeS2 using FTIR-VIS-UV spectroscopic ellipsometry

J 2023

Dielectric function and band gap determination of single crystal CuFeS2 using FTIR-VIS-UV spectroscopic ellipsometry

HALE, Nathan; Matthias HARTL; Josef HUMLÍČEK; Christoph BRUNE; Morten KILDEMO et al.

Základní údaje

Originální název

Dielectric function and band gap determination of single crystal CuFeS2 using FTIR-VIS-UV spectroscopic ellipsometry

Autoři

HALE, Nathan; Matthias HARTL; Josef HUMLÍČEK; Christoph BRUNE a Morten KILDEMO

Vydání

Optical Materials Express, WASHINGTON, Optica Publishing Group, 2023, 2159-3930

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 2.800

Označené pro přenos do RIV

Ano

Kód RIV

RIV/00216224:14310/23:00131418

Organizační jednotka

Přírodovědecká fakulta

Klíčová slova anglicky

ELECTRONIC; STRUCTUREOPTICAL; PROPERTIESSPIN; WAVES CHALCOPYRITE PHONONS GROWTH

Štítky

14312020, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 25. 3. 2024 09:56, Mgr. Marie Novosadová Šípková, DiS.

Anotace

V originále

Spectroscopic ellipsometry measurements were performed on antiferromagnetic semiconductor CuFeS2 grown via molecular beam epitaxy. UV/Visible and IR ellipsometry data was merged and modeled to derive the dielectric function of CuFeS2 from 30 meV to 4.5 eV. The CuFeS2 samples were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and cross-section scanning electron microscopy (SEM) which gave the crystal quality, surface roughness and sample film thickness. A critical point analysis revealed a direct band gap of 0.76 eV, while modeling gives a carrier concentration of 8 & PLUSMN; 2 x 1019 & SIM;cm-3 and an estimate of the indirect band gap of 0.5 eV. Optically active infrared phonons were observed at 319 cm-1 and 350 cm-1 with significant Raman active modes at 85.8 cm-1, 265 cm-1, 288 cm-1, 318 cm-1 and 377 cm-1. The fitted optical constants were then used to characterize the crystal quality and spatial uniformity.

Návaznosti

90110, velká výzkumná infrastruktura

Název: CzechNanoLab

Citovat

HALE, Nathan; Matthias HARTL; Josef HUMLÍČEK; Christoph BRUNE a Morten KILDEMO. Dielectric function and band gap determination of single crystal CuFeS2 using FTIR-VIS-UV spectroscopic ellipsometry. Optical Materials Express. WASHINGTON: Optica Publishing Group, 2023, roč. 13, č. 7, s. 2020-2035. ISSN 2159-3930. Dostupné z: https://doi.org/10.1364/OME.493426.

@article{2302528,
   author = {Hale, Nathan and Hartl, Matthias and Humlíček, Josef and Brune, Christoph and Kildemo, Morten},
   article_location = {WASHINGTON},
   article_number = {7},
   doi = {https://doi.org/10.1364/OME.493426},
   keywords = {ELECTRONIC; STRUCTUREOPTICAL; PROPERTIESSPIN; WAVES CHALCOPYRITE PHONONS GROWTH},
   language = {eng},
   issn = {2159-3930},
   journal = {Optical Materials Express},
   title = {Dielectric function and band gap determination of single crystal CuFeS2 using FTIR-VIS-UV spectroscopic ellipsometry},
   url = {https://opg.optica.org/ome/fulltext.cfm?uri=ome-13-7-2020&id=532139},
   volume = {13},
   year = {2023}
}

TY  - JOUR
ID  - 2302528
AU  - Hale, Nathan - Hartl, Matthias - Humlíček, Josef - Brune, Christoph - Kildemo, Morten
PY  - 2023
TI  - Dielectric function and band gap determination of single crystal CuFeS2 using FTIR-VIS-UV spectroscopic ellipsometry
JF  - Optical Materials Express
VL  - 13
IS  - 7
SP  - 2020-2035
EP  - 2020-2035
PB  - Optica Publishing Group
SN  - 21593930
KW  - ELECTRONIC
KW  - STRUCTUREOPTICAL
KW  - PROPERTIESSPIN
KW  - WAVES CHALCOPYRITE PHONONS GROWTH
UR  - https://opg.optica.org/ome/fulltext.cfm?uri=ome-13-7-2020&id=532139
N2  - Spectroscopic ellipsometry measurements were performed on antiferromagnetic semiconductor CuFeS2 grown via molecular beam epitaxy. UV/Visible and IR ellipsometry data was merged and modeled to derive the dielectric function of CuFeS2 from 30 meV to 4.5 eV. The CuFeS2 samples were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and cross-section scanning electron microscopy (SEM) which gave the crystal quality, surface roughness and sample film thickness. A critical point analysis revealed a direct band gap of 0.76 eV, while modeling gives a carrier concentration of 8 & PLUSMN; 2 x 1019 & SIM;cm-3 and an estimate of the indirect band gap of 0.5 eV. Optically active infrared phonons were observed at 319 cm-1 and 350 cm-1 with significant Raman active modes at 85.8 cm-1, 265 cm-1, 288 cm-1, 318 cm-1 and 377 cm-1. The fitted optical constants were then used to characterize the crystal quality and spatial uniformity.
ER  -

HALE, Nathan; Matthias HARTL; Josef HUMLÍČEK; Christoph BRUNE a Morten KILDEMO. Dielectric function and band gap determination of single crystal CuFeS2 using FTIR-VIS-UV spectroscopic ellipsometry. \textit{Optical Materials Express}. WASHINGTON: Optica Publishing Group, 2023, roč.~13, č.~7, s.~2020-2035. ISSN~2159-3930. Dostupné z: https://doi.org/10.1364/OME.493426.

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