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@article{2302528,
author = {Hale, Nathan and Hartl, Matthias and Humlíček, Josef and Brune, Christoph and Kildemo, Morten},
article_location = {WASHINGTON},
article_number = {7},
doi = {http://dx.doi.org/10.1364/OME.493426},
keywords = {ELECTRONIC; STRUCTUREOPTICAL; PROPERTIESSPIN; WAVES CHALCOPYRITE PHONONS GROWTH},
language = {eng},
issn = {2159-3930},
journal = {Optical Materials Express},
title = {Dielectric function and band gap determination of single crystal CuFeS2 using FTIR-VIS-UV spectroscopic ellipsometry},
url = {https://opg.optica.org/ome/fulltext.cfm?uri=ome-13-7-2020&id=532139},
volume = {13},
year = {2023}
}
TY - JOUR
ID - 2302528
AU - Hale, Nathan - Hartl, Matthias - Humlíček, Josef - Brune, Christoph - Kildemo, Morten
PY - 2023
TI - Dielectric function and band gap determination of single crystal CuFeS2 using FTIR-VIS-UV spectroscopic ellipsometry
JF - Optical Materials Express
VL - 13
IS - 7
SP - 2020-2035
EP - 2020-2035
PB - Optica Publishing Group
SN - 21593930
KW - ELECTRONIC
KW - STRUCTUREOPTICAL
KW - PROPERTIESSPIN
KW - WAVES CHALCOPYRITE PHONONS GROWTH
UR - https://opg.optica.org/ome/fulltext.cfm?uri=ome-13-7-2020&id=532139
N2 - Spectroscopic ellipsometry measurements were performed on antiferromagnetic semiconductor CuFeS2 grown via molecular beam epitaxy. UV/Visible and IR ellipsometry data was merged and modeled to derive the dielectric function of CuFeS2 from 30 meV to 4.5 eV. The CuFeS2 samples were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and cross-section scanning electron microscopy (SEM) which gave the crystal quality, surface roughness and sample film thickness. A critical point analysis revealed a direct band gap of 0.76 eV, while modeling gives a carrier concentration of 8 & PLUSMN; 2 x 1019 & SIM;cm-3 and an estimate of the indirect band gap of 0.5 eV. Optically active infrared phonons were observed at 319 cm-1 and 350 cm-1 with significant Raman active modes at 85.8 cm-1, 265 cm-1, 288 cm-1, 318 cm-1 and 377 cm-1. The fitted optical constants were then used to characterize the crystal quality and spatial uniformity.
ER -
HALE, Nathan, Matthias HARTL, Josef HUMLÍČEK, Christoph BRUNE a Morten KILDEMO. Dielectric function and band gap determination of single crystal CuFeS2 using FTIR-VIS-UV spectroscopic ellipsometry. \textit{Optical Materials Express}. WASHINGTON: Optica Publishing Group, 2023, roč.~13, č.~7, s.~2020-2035. ISSN~2159-3930. Dostupné z: https://dx.doi.org/10.1364/OME.493426.
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