2023
Theoretical study of MoSi2/TiSi2 disilicide nanocomposites with vacancies and impurities
VŠIANSKÁ, Monika; Jana PAVLŮ and Mojmír ŠOBBasic information
Original name
Theoretical study of MoSi2/TiSi2 disilicide nanocomposites with vacancies and impurities
Authors
VŠIANSKÁ, Monika (203 Czech Republic, belonging to the institution); Jana PAVLŮ (203 Czech Republic, belonging to the institution) and Mojmír ŠOB (203 Czech Republic, guarantor, belonging to the institution)
Edition
Surfaces and Interfaces, Amsterdam, Elsevier Science, 2023, 2468-0230
Other information
Language
English
Type of outcome
Article in a journal
Field of Study
10403 Physical chemistry
Country of publisher
Netherlands
Confidentiality degree
is not subject to a state or trade secret
References:
Impact factor
Impact factor: 5.700
RIV identification code
RIV/00216224:14310/23:00132488
Organization unit
Faculty of Science
UT WoS
001101597700001
EID Scopus
2-s2.0-85174170555
Keywords in English
Disilicides; Nanocomposites; Phase boundaries; Vacancies; Si and Al impurities; Computer simulations
Tags
Tags
International impact, Reviewed
Changed: 22/1/2024 11:09, Mgr. Pavla Foltynová, Ph.D.
Abstract
In the original language
Research on disilicide nanocomposites, as modern materials with promising technological applications, is very desirable in these days. Our ab initio analysis concentrates on the C11(b) (tetragonal) MoSi2/C54 (orthorhombic) TiSi2 nanocomposites containing 14 types of interfaces formed by planes with similar arrangements (i.e. (110) planes in the C11(b) and (100) planes in the C54 disilicide). The most stable nanocomposites are MoSi2(AC)/TiSi2(DACB) with interfaces CD and BA and MoSi2(AD)/TiSi2(CADB) with interfaces DC and BA, both with the formation energy (related to standard element reference states) equal to -0.615 eV.atom(-1) and with the lowest interface energies. In the most stable and one higher-energy interface, the effect of the impurities (Al, Si) and vacancies on the stability and structure arrangement was investigated. It turned out that: (i) Al (Si) impurities occupy Si (Ti) positions in MoSi2 (TiSi2) in the 2nd and 3rd (and 4th) layer from the interface; (ii) the interfacial Si vacancy is the most stable having the formation energy of 2.568 eV.Va(-1); (iii) the least destabilising divacancy is of the Si-Si type, and (iv) Si and Al impurities simplify the formation of vacancies. As there is very little experimental information on the structure and properties of these interfaces, most of the present results are theoretical predictions which may motivate future experimental work.
Links
LM2015085, research and development project |
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LM2018140, research and development project |
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LQ1601, research and development project |
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90140, large research infrastructures |
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