Defect pairing in Fe-doped SnS van der Waals crystals: a
photoemission and scanning tunneling microscopy study

J 2023

Defect pairing in Fe-doped SnS van der Waals crystals: a photoemission and scanning tunneling microscopy study

YESILPINAR, Damla, Martin VONDRÁČEK, Patrik ČERMÁK, Harry MÖNIG, Jaromír KOPEČEK et. al.

Základní údaje

Originální název

Defect pairing in Fe-doped SnS van der Waals crystals: a photoemission and scanning tunneling microscopy study

Autoři

YESILPINAR, Damla, Martin VONDRÁČEK, Patrik ČERMÁK, Harry MÖNIG, Jaromír KOPEČEK, Ondřej CAHA (203 Česká republika, domácí), Karel CARVA, Čestmír DRAŠAR a Jan HONOLKA (garant)

Vydání

Nanoscale, Royal Society of Chemistry, 2023, 2040-3364

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Velká Británie a Severní Irsko

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 6.700 v roce 2022

Kód RIV

RIV/00216224:14310/23:00132757

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1039/d3nr01905e

UT WoS

001037434000001

Klíčová slova anglicky

magnetism; vdW; multilayer interfaces

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 4. 1. 2024 11:48, Mgr. Marie Šípková, DiS.

Anotace

V originále

We investigate the effect of low concentrations of iron on the physical properties of SnS van der Waals crystals grown from the melt. By means of scanning tunneling microscopy (STM) and photoemission spectroscopy we study Fe-induced defects and observe an electron doping effect in the band structure of the native p-type SnS semiconductor. Atomically resolved and bias dependent STM data of characteristic defects are compared to ab initio density functional theory simulations of vacancy (V-S and V-Sn), Fe substitutional (Fe-Sn), and Fe interstitial (Fe-int) defects. While native SnS is dominated by acceptor-like V-Sn vacancies, our results show that Fe preferentially occupies donor-like interstitial Fe-int sites in close proximity to V-Sn defects along the high-symmetry c-axis of SnS. The formation of such well-defined coupled (V-Sn, Fe-int) defect pairs leads to local compensation of the acceptor-like character of V-Sn, which is in line with a reduction of p-type carrier concentrations observed in our Hall transport measurements.

Návaznosti

90110, velká výzkumná infrastruktura

Název: CzechNanoLab

90254, velká výzkumná infrastruktura

Název: e-INFRA CZ II

Citovat

YESILPINAR, Damla, Martin VONDRÁČEK, Patrik ČERMÁK, Harry MÖNIG, Jaromír KOPEČEK, Ondřej CAHA, Karel CARVA, Čestmír DRAŠAR a Jan HONOLKA. Defect pairing in Fe-doped SnS van der Waals crystals: a photoemission and scanning tunneling microscopy study. Nanoscale. Royal Society of Chemistry, 2023, roč. 15, č. 31, s. 13110-13119. ISSN 2040-3364. Dostupné z: https://dx.doi.org/10.1039/d3nr01905e.

@article{2355839,
   author = {Yesilpinar, Damla and Vondráček, Martin and Čermák, Patrik and Mönig, Harry and Kopeček, Jaromír and Caha, Ondřej and Carva, Karel and Drašar, Čestmír and Honolka, Jan},
   article_number = {31},
   doi = {http://dx.doi.org/10.1039/d3nr01905e},
   keywords = {magnetism; vdW; multilayer interfaces},
   language = {eng},
   issn = {2040-3364},
   journal = {Nanoscale},
   title = {Defect pairing in Fe-doped SnS van der Waals crystals: a photoemission and scanning tunneling microscopy study},
   url = {https://doi.org/10.1039/D3NR01905E},
   volume = {15},
   year = {2023}
}

TY  - JOUR
ID  - 2355839
AU  - Yesilpinar, Damla - Vondráček, Martin - Čermák, Patrik - Mönig, Harry - Kopeček, Jaromír - Caha, Ondřej - Carva, Karel - Drašar, Čestmír - Honolka, Jan
PY  - 2023
TI  - Defect pairing in Fe-doped SnS van der Waals crystals: a photoemission and scanning tunneling microscopy study
JF  - Nanoscale
VL  - 15
IS  - 31
SP  - 13110-13119
EP  - 13110-13119
PB  - Royal Society of Chemistry
SN  - 20403364
KW  - magnetism
KW  - vdW
KW  - multilayer interfaces
UR  - https://doi.org/10.1039/D3NR01905E
N2  - We investigate the effect of low concentrations of iron on the physical properties of SnS van der Waals crystals grown from the melt. By means of scanning tunneling microscopy (STM) and photoemission spectroscopy we study Fe-induced defects and observe an electron doping effect in the band structure of the native p-type SnS semiconductor. Atomically resolved and bias dependent STM data of characteristic defects are compared to ab initio density functional theory simulations of vacancy (V-S and V-Sn), Fe substitutional (Fe-Sn), and Fe interstitial (Fe-int) defects. While native SnS is dominated by acceptor-like V-Sn vacancies, our results show that Fe preferentially occupies donor-like interstitial Fe-int sites in close proximity to V-Sn defects along the high-symmetry c-axis of SnS. The formation of such well-defined coupled (V-Sn, Fe-int) defect pairs leads to local compensation of the acceptor-like character of V-Sn, which is in line with a reduction of p-type carrier concentrations observed in our Hall transport measurements.
ER  -

YESILPINAR, Damla, Martin VONDRÁČEK, Patrik ČERMÁK, Harry MÖNIG, Jaromír KOPEČEK, Ondřej CAHA, Karel CARVA, Čestmír DRAŠAR a Jan HONOLKA. Defect pairing in Fe-doped SnS van der Waals crystals: a photoemission and scanning tunneling microscopy study. \textit{Nanoscale}. Royal Society of Chemistry, 2023, roč.~15, č.~31, s.~13110-13119. ISSN~2040-3364. Dostupné z: https://dx.doi.org/10.1039/d3nr01905e.

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