Epitaxial growth and characterization of multi-layer
site-controlled InGaAs quantum dots based on the buried
stressor method

J 2024

Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method

LIMAME, Imad; Ching-Wen SHIH; Alexej KOLTCHANOV; Fabian HEISINGER; Felix NIPPERT et. al.

Základní údaje

Originální název

Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method

Autoři

LIMAME, Imad; Ching-Wen SHIH; Alexej KOLTCHANOV; Fabian HEISINGER; Felix NIPPERT; Moritz PLATTNER; Johannes SCHALL; Markus R. WAGNER; Sven RODT; Petr KLENOVSKÝ a Stephan REITZENSTEIN

Vydání

Applied Physics Letters, AIP Publishing, 2024, 0003-6951

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 3.600

Kód RIV

RIV/00216224:14310/24:00135509

Organizační jednotka

Přírodovědecká fakulta

DOI

https://doi.org/10.1063/5.0187074

UT WoS

001158728800013

EID Scopus

2-s2.0-85184990547

Klíčová slova anglicky

Phonons; Semiconductors; Elasticity theory; Emission spectroscopy; Epitaxy; Atomic force microscopy; Quantum dots; Surface strains; Nanotechnology; Lasers

Štítky

14312020, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 28. 2. 2024 11:27, Mgr. Marie Novosadová Šípková, DiS.

Anotace

V originále

We report on the epitaxial growth, theoretical modeling, and structural as well as optical investigation of multi-layer, site-controlled quantum dots fabricated using the buried stressor method. This deterministic growth technique utilizes the strain from a partially oxidized AlAs layer to induce site-selective nucleation of InGaAs quantum dots. By implementing strain-induced spectral nano-engineering, we achieve spectral control of emission and a local increase in the emitter density. Furthermore, we achieve a threefold increase in the optical intensity and reduce the inhomogeneous broadening of the ensemble emission by 20% via stacking three layers of site-controlled emitters, which is valuable for using the SCQDs as a gain medium in microlaser applications. Our optimization of site-controlled growth of quantum dots enables the development of high-β microlasers with increased confinement factor.

Návaznosti

EH22_008/0004572, projekt VaV

Název: Kvantové materiály pro aplikace v udržitelných technologiích

Citovat

LIMAME, Imad; Ching-Wen SHIH; Alexej KOLTCHANOV; Fabian HEISINGER; Felix NIPPERT; Moritz PLATTNER; Johannes SCHALL; Markus R. WAGNER; Sven RODT; Petr KLENOVSKÝ a Stephan REITZENSTEIN. Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method. Applied Physics Letters. AIP Publishing, 2024, roč. 124, č. 6, s. 1-6. ISSN 0003-6951. Dostupné z: https://doi.org/10.1063/5.0187074.

@article{2373438,
   author = {Limame, Imad and Shih, ChingandWen and Koltchanov, Alexej and Heisinger, Fabian and Nippert, Felix and Plattner, Moritz and Schall, Johannes and Wagner, Markus R. and Rodt, Sven and Klenovský, Petr and Reitzenstein, Stephan},
   article_number = {6},
   doi = {https://doi.org/10.1063/5.0187074},
   keywords = {Phonons; Semiconductors; Elasticity theory; Emission spectroscopy; Epitaxy; Atomic force microscopy; Quantum dots; Surface strains; Nanotechnology; Lasers},
   language = {eng},
   issn = {0003-6951},
   journal = {Applied Physics Letters},
   title = {Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method},
   url = {https://pubs.aip.org/aip/apl/article/124/6/061102/3262374/Epitaxial-growth-and-characterization-of-multi},
   volume = {124},
   year = {2024}
}

TY  - JOUR
ID  - 2373438
AU  - Limame, Imad - Shih, Ching-Wen - Koltchanov, Alexej - Heisinger, Fabian - Nippert, Felix - Plattner, Moritz - Schall, Johannes - Wagner, Markus R. - Rodt, Sven - Klenovský, Petr - Reitzenstein, Stephan
PY  - 2024
TI  - Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method
JF  - Applied Physics Letters
VL  - 124
IS  - 6
SP  - 1-6
EP  - 1-6
PB  - AIP Publishing
SN  - 00036951
KW  - Phonons
KW  - Semiconductors
KW  - Elasticity theory
KW  - Emission spectroscopy
KW  - Epitaxy
KW  - Atomic force microscopy
KW  - Quantum dots
KW  - Surface strains
KW  - Nanotechnology
KW  - Lasers
UR  - https://pubs.aip.org/aip/apl/article/124/6/061102/3262374/Epitaxial-growth-and-characterization-of-multi
N2  - We report on the epitaxial growth, theoretical modeling, and structural as well as optical investigation of multi-layer, site-controlled quantum dots fabricated using the buried stressor method. This deterministic growth technique utilizes the strain from a partially oxidized AlAs layer to induce site-selective nucleation of InGaAs quantum dots. By implementing strain-induced spectral nano-engineering, we achieve spectral control of emission and a local increase in the emitter density. Furthermore, we achieve a threefold increase in the optical intensity and reduce the inhomogeneous broadening of the ensemble emission by 20% via stacking three layers of site-controlled emitters, which is valuable for using the SCQDs as a gain medium in microlaser applications. Our optimization of site-controlled growth of quantum dots enables the development of high-β microlasers with increased confinement factor.
ER  -

LIMAME, Imad; Ching-Wen SHIH; Alexej KOLTCHANOV; Fabian HEISINGER; Felix NIPPERT; Moritz PLATTNER; Johannes SCHALL; Markus R. WAGNER; Sven RODT; Petr KLENOVSKÝ a Stephan REITZENSTEIN. Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method. \textit{Applied Physics Letters}. AIP Publishing, 2024, roč.~124, č.~6, s.~1-6. ISSN~0003-6951. Dostupné z: https://doi.org/10.1063/5.0187074.

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