Modulation of room temperature ferromagnetism in WO3 thin films
on low-cost Si wafers

J 2025

Modulation of room temperature ferromagnetism in WO3 thin films on low-cost Si wafers

PHAM, Sy Nguyen a Hoa Hong NGUYEN

Základní údaje

Originální název

Modulation of room temperature ferromagnetism in WO3 thin films on low-cost Si wafers

Autoři

PHAM, Sy Nguyen a Hoa Hong NGUYEN

Vydání

Solid State Communications, Elsevier, 2025, 0038-1098

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Velká Británie a Severní Irsko

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 2.400 v roce 2024

Organizační jednotka

Přírodovědecká fakulta

DOI

https://doi.org/10.1016/j.ssc.2024.115807

UT WoS

001394804000001

EID Scopus

2-s2.0-85212576531

Klíčová slova anglicky

Tungsten trioxide; Room temperature ferromagnetism; Ar:O2 ratio; Thin films

Štítky

14312020, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 22. 1. 2025 12:56, Mgr. Marie Novosadová Šípková, DiS.

Anotace

V originále

Advancements in room temperature ferromagnetic semiconductors boost the possibility of next generation spintronics. It is quite challenging to achieve the room temperature ferromagnetism which is compatible with promising prospect for application of spintronic devices. Room temperature ferromagnetism can be obtained by introducing vacancies into semiconductor oxides. Therefore, synergetic effects between substrate temperature and Ar:O2 ratio during thin film growth are expected to play important roles in inducing ferromagnetism (FM). Herein, we have investigated the influence of these parameters on room temperature FM of WO3 thin films on low-cost Si wafers. Based on the results, there are three possible conclusions: (1) the major effect of temperature and Ar:O2 ratios on structural composition of WO3 during fabrication process, (2) structural phase of WO3 has a significant influence on RT-FM, and (3) the crucial role of oxygen vacancies in RT-FM of WO3. This study may pave the way for understanding the mechanism of room temperature FM in WO3 thin films and innovating future technological applications.

Návaznosti

EH22_008/0004572, projekt VaV

Název: Kvantové materiály pro aplikace v udržitelných technologiích

GA22-21547S, projekt VaV

Název: Původ feromagnetismu při pokojové teplotě v tenkých vrstvách nedopovaných polovodičových oxidů typu d0

Investor: Grantová agentura ČR, Původ feromagnetismu při pokojové teplotě v tenkých vrstvách nedopovaných polovodičových oxidů typu d0

90110, velká výzkumná infrastruktura

Název: CzechNanoLab

Citovat

PHAM, Sy Nguyen a Hoa Hong NGUYEN. Modulation of room temperature ferromagnetism in WO3 thin films on low-cost Si wafers. Solid State Communications. Elsevier, 2025, roč. 397, March, s. 1-6. ISSN 0038-1098. Dostupné z: https://doi.org/10.1016/j.ssc.2024.115807.

@article{2463898,
   author = {Pham, Sy Nguyen and NGUYEN, Hoa Hong},
   article_number = {March},
   doi = {https://doi.org/10.1016/j.ssc.2024.115807},
   keywords = {Tungsten trioxide; Room temperature ferromagnetism; Ar:O2 ratio; Thin films},
   language = {eng},
   issn = {0038-1098},
   journal = {Solid State Communications},
   title = {Modulation of room temperature ferromagnetism in WO3 thin films on low-cost Si wafers},
   url = {https://www.sciencedirect.com/science/article/pii/S0038109824003843},
   volume = {397},
   year = {2025}
}

TY  - JOUR
ID  - 2463898
AU  - Pham, Sy Nguyen - NGUYEN, Hoa Hong
PY  - 2025
TI  - Modulation of room temperature ferromagnetism in WO3 thin films on low-cost Si wafers
JF  - Solid State Communications
VL  - 397
IS  - March
SP  - 1-6
EP  - 1-6
PB  - Elsevier
SN  - 00381098
KW  - Tungsten trioxide
KW  - Room temperature ferromagnetism
KW  - Ar:O2 ratio
KW  - Thin films
UR  - https://www.sciencedirect.com/science/article/pii/S0038109824003843
N2  - Advancements in room temperature ferromagnetic semiconductors boost the possibility of next generation spintronics. It is quite challenging to achieve the room temperature ferromagnetism which is compatible with promising prospect for application of spintronic devices. Room temperature ferromagnetism can be obtained by introducing vacancies into semiconductor oxides. Therefore, synergetic effects between substrate temperature and Ar:O2 ratio during thin film growth are expected to play important roles in inducing ferromagnetism (FM). Herein, we have investigated the influence of these parameters on room temperature FM of WO3 thin films on low-cost Si wafers. Based on the results, there are three possible conclusions: (1) the major effect of temperature and Ar:O2 ratios on structural composition of WO3 during fabrication process, (2) structural phase of WO3 has a significant influence on RT-FM, and (3) the crucial role of oxygen vacancies in RT-FM of WO3. This study may pave the way for understanding the mechanism of room temperature FM in WO3 thin films and innovating future technological applications.
ER  -

PHAM, Sy Nguyen a Hoa Hong NGUYEN. Modulation of room temperature ferromagnetism in WO3 thin films on low-cost Si wafers. \textit{Solid State Communications}. Elsevier, 2025, roč.~397, March, s.~1-6. ISSN~0038-1098. Dostupné z: https://doi.org/10.1016/j.ssc.2024.115807.

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