Site-Controlled Growth of InGaAs Quantum Dots Based on Buried
Stressors for the Development of Microlasers and Quantum Light
Sources

D 2024

Site-Controlled Growth of InGaAs Quantum Dots Based on Buried Stressors for the Development of Microlasers and Quantum Light Sources

PODHORSKÝ, M.; M. KLONZ; I. LIMAME; S. TRIPATHI; K. GAUR et al.

Základní údaje

Originální název

Site-Controlled Growth of InGaAs Quantum Dots Based on Buried Stressors for the Development of Microlasers and Quantum Light Sources

Autoři

PODHORSKÝ, M.; M. KLONZ; I. LIMAME; S. TRIPATHI; K. GAUR; Ch. C. PALEKAR; P. MUDI; Petr KLENOVSKÝ; S. RODT a S. REITZENSTEIN

Vydání

33rd Joint Seminar Development of Materials Science in Research and Education, DMSRE 2024, od s. 1-8, 8 s. 2024

Nakladatel

IOP Publishing

Další údaje

Jazyk

angličtina

Typ výsledku

Stať ve sborníku

Obor

10302 Condensed matter physics

Stát vydavatele

Velká Británie a Severní Irsko

Utajení

není předmětem státního či obchodního tajemství

Forma vydání

elektronická verze "online"

Odkazy

URL

Označené pro přenos do RIV

Organizační jednotka

Přírodovědecká fakulta

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 20. 5. 2025 14:54, Mgr. Marie Novosadová Šípková, DiS.

Anotace

V originále

Many applications of InGaAs quantum dots in various fields of photonics, including optoelectronics, quantum technologies, and telecommunications have emerged in recent years. The objective of this work is to evaluate and optimize the growth and fabrication parameters of site-controlled InGaAs quantum dots, grown with the buried stressor method. The aim is to enhance the precision, uniformity and reproducibility of the quantum dot placement and local density for advanced optoelectronic applications, such as low-treshold microlasers and quantum light sources. The influence of the growth and the fabrication processes on the structural and optical properties of site-controlled quantum dots is investigated in depth using cathodoluminescence mapping, scanning electron microscopy, confocal laser scanning microscopy, and photoluminescence spectroscopy.

Návaznosti

EH22_008/0004572, projekt VaV

Název: Kvantové materiály pro aplikace v udržitelných technologiích

Citovat

PODHORSKÝ, M.; M. KLONZ; I. LIMAME; S. TRIPATHI; K. GAUR; Ch. C. PALEKAR; P. MUDI; Petr KLENOVSKÝ; S. RODT a S. REITZENSTEIN. Site-Controlled Growth of InGaAs Quantum Dots Based on Buried Stressors for the Development of Microlasers and Quantum Light Sources. Online. In Behulova M., Behulova M., Kozisek Z. 33rd Joint Seminar Development of Materials Science in Research and Education, DMSRE 2024. IOP Publishing, 2024, s. 1-8. Dostupné z: https://doi.org/10.1088/1742-6596/2931/1/012016.

@inproceedings{2497778,
   author = {Podhorský, M. and Klonz, M. and Limame, I. and Tripathi, S. and Gaur, K. and Palekar, Ch. C. and Mudi, P. and Klenovský, Petr and Rodt, S. and Reitzenstein, S.},
   booktitle = {33rd Joint Seminar Development of Materials Science in Research and Education, DMSRE 2024},
   doi = {https://doi.org/10.1088/1742-6596/2931/1/012016},
   editor = {Behulova M., Behulova M., Kozisek Z.},
   howpublished = {elektronická verze "online"},
   language = {eng},
   pages = {1-8},
   publisher = {IOP Publishing},
   title = {Site-Controlled Growth of InGaAs Quantum Dots Based on Buried Stressors for the Development of Microlasers and Quantum Light Sources},
   url = {https://iopscience.iop.org/article/10.1088/1742-6596/2931/1/012016/meta},
   year = {2024}
}

TY  - CONF
ID  - 2497778
AU  - Podhorský, M. - Klonz, M. - Limame, I. - Tripathi, S. - Gaur, K. - Palekar, Ch. C. - Mudi, P. - Klenovský, Petr - Rodt, S. - Reitzenstein, S.
PY  - 2024
TI  - Site-Controlled Growth of InGaAs Quantum Dots Based on Buried Stressors for the Development of Microlasers and Quantum Light Sources
PB  - IOP Publishing
UR  - https://iopscience.iop.org/article/10.1088/1742-6596/2931/1/012016/meta
N2  - Many applications of InGaAs quantum dots in various fields of photonics, including optoelectronics, quantum technologies, and telecommunications have emerged in recent years. The objective of this work is to evaluate and optimize the growth and fabrication parameters of site-controlled InGaAs quantum dots, grown with the buried stressor method. The aim is to enhance the precision, uniformity and reproducibility of the quantum dot placement and local density for advanced optoelectronic applications, such as low-treshold microlasers and quantum light sources. The influence of the growth and the fabrication processes on the structural and optical properties of site-controlled quantum dots is investigated in depth using cathodoluminescence mapping, scanning electron microscopy, confocal laser scanning microscopy, and photoluminescence spectroscopy.
ER  -

PODHORSKÝ, M.; M. KLONZ; I. LIMAME; S. TRIPATHI; K. GAUR; Ch. C. PALEKAR; P. MUDI; Petr KLENOVSKÝ; S. RODT a S. REITZENSTEIN. Site-Controlled Growth of InGaAs Quantum Dots Based on Buried Stressors for the Development of Microlasers and Quantum Light Sources. Online. In Behulova M., Behulova M., Kozisek Z. \textit{33rd Joint Seminar Development of Materials Science in Research and Education, DMSRE 2024}. IOP Publishing, 2024, s.~1-8. Dostupné z: https://doi.org/10.1088/1742-6596/2931/1/012016.

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