Determination of refractive index of crystalline silicon in the
infrared region on the basis of interference pattern observed
in thick slab

J 2025

Determination of refractive index of crystalline silicon in the infrared region on the basis of interference pattern observed in thick slab

VOHÁNKA, Jiří; Jiří VEČEŘE; Daniel FRANTA a Ivan OHLÍDAL

Základní údaje

Originální název

Determination of refractive index of crystalline silicon in the infrared region on the basis of interference pattern observed in thick slab

Autoři

VOHÁNKA, Jiří; Jiří VEČEŘE; Daniel FRANTA a Ivan OHLÍDAL

Vydání

Infrared Physics and Technology, Elsevier B.V. 2025, 1350-4495

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10305 Fluids and plasma physics

Stát vydavatele

Nizozemské království

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 3.400 v roce 2024

Označené pro přenos do RIV

Ano

Kód RIV

RIV/00216224:14310/25:00141249

Organizační jednotka

Přírodovědecká fakulta

Klíčová slova anglicky

Silicon; Infrared spectroscopy; Refractive index; Ellipsometry

Štítky

14312030, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 29. 5. 2025 09:40, Mgr. Marie Novosadová Šípková, DiS.

Anotace

V originále

The precise values of the refractive index of crystalline silicon are determined in the infrared region based on the measurements of the interference pattern in 0.25 mm thick wafer. The interference pattern observed for one particular incidence angle allows us to determine the optical thickness precisely, however, the wafer thickness and refractive index, whose product gives the optical thickness, can be determined with much worse accuracy. This limitation could be overcome by using several incidence angles because if the dependence of the period of interference pattern on the incidence angle is considered, it is possible to determine both the thickness and refractive index with high accuracy. The FTIR infrared ellipsometer is used for measurements at oblique incidence angles, while the FTIR spectrophotometer is utilized for measurements at near-normal incidence. To correctly interpret the experimental data, it is necessary to consider the influence of the finite spectral resolution and beam divergence of the instruments and the thickness non-uniformity of the sample. These effects significantly alter the observed interference patterns. The formulae needed to accomplish this task are derived in this work. The values of the refractive index determined using the proposed method for the crystalline silicon show differences smaller than 10-3 from the values obtained by the minimum deviation method.

Návaznosti

LM2023039, projekt VaV

Název: Centrum výzkumu a vývoje plazmatu a nanotechnologických povrchových úprav

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, R&D centre for plasma and nanotechnology surface modifications

Citovat

VOHÁNKA, Jiří; Jiří VEČEŘE; Daniel FRANTA a Ivan OHLÍDAL. Determination of refractive index of crystalline silicon in the infrared region on the basis of interference pattern observed in thick slab. Infrared Physics and Technology. Elsevier B.V., 2025, roč. 149, September, s. 1-11. ISSN 1350-4495. Dostupné z: https://doi.org/10.1016/j.infrared.2025.105889.

@article{2499782,
   author = {Vohánka, Jiří and Večeře, Jiří and Franta, Daniel and Ohlídal, Ivan},
   article_number = {September},
   doi = {https://doi.org/10.1016/j.infrared.2025.105889},
   keywords = {Silicon; Infrared spectroscopy; Refractive index; Ellipsometry},
   language = {eng},
   issn = {1350-4495},
   journal = {Infrared Physics and Technology},
   title = {Determination of refractive index of crystalline silicon in the infrared region on the basis of interference pattern observed in thick slab},
   url = {https://doi.org/10.1016/j.infrared.2025.105889},
   volume = {149},
   year = {2025}
}

TY  - JOUR
ID  - 2499782
AU  - Vohánka, Jiří - Večeře, Jiří - Franta, Daniel - Ohlídal, Ivan
PY  - 2025
TI  - Determination of refractive index of crystalline silicon in the infrared region on the basis of interference pattern observed in thick slab
JF  - Infrared Physics and Technology
VL  - 149
IS  - September
SP  - 1-11
EP  - 1-11
PB  - Elsevier B.V.
SN  - 13504495
KW  - Silicon
KW  - Infrared spectroscopy
KW  - Refractive index
KW  - Ellipsometry
UR  - https://doi.org/10.1016/j.infrared.2025.105889
N2  - The precise values of the refractive index of crystalline silicon are determined in the infrared region based on the measurements of the interference pattern in 0.25 mm thick wafer. The interference pattern observed for one particular incidence angle allows us to determine the optical thickness precisely, however, the wafer thickness and refractive index, whose product gives the optical thickness, can be determined with much worse accuracy. This limitation could be overcome by using several incidence angles because if the dependence of the period of interference pattern on the incidence angle is considered, it is possible to determine both the thickness and refractive index with high accuracy. The FTIR infrared ellipsometer is used for measurements at oblique incidence angles, while the FTIR spectrophotometer is utilized for measurements at near-normal incidence. To correctly interpret the experimental data, it is necessary to consider the influence of the finite spectral resolution and beam divergence of the instruments and the thickness non-uniformity of the sample. These effects significantly alter the observed interference patterns. The formulae needed to accomplish this task are derived in this work. The values of the refractive index determined using the proposed method for the crystalline silicon show differences smaller than 10-3 from the values obtained by the minimum deviation method.
ER  -

VOHÁNKA, Jiří; Jiří VEČEŘE; Daniel FRANTA a Ivan OHLÍDAL. Determination of refractive index of crystalline silicon in the infrared region on the basis of interference pattern observed in thick slab. \textit{Infrared Physics and Technology}. Elsevier B.V., 2025, roč.~149, September, s.~1-11. ISSN~1350-4495. Dostupné z: https://doi.org/10.1016/j.infrared.2025.105889.

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