Sc-doped GeTe thin films prepared by radio-frequency magnetron
sputtering

J 2025

Sc-doped GeTe thin films prepared by radio-frequency magnetron sputtering

BOUŠKA, Marek; Jan GUTWIRTH; Kamil BEČVÁŘ; Vladimír KUCEK; Stanislav ŠLANG et al.

Základní údaje

Originální název

Sc-doped GeTe thin films prepared by radio-frequency magnetron sputtering

Autoři

BOUŠKA, Marek; Jan GUTWIRTH; Kamil BEČVÁŘ; Vladimír KUCEK; Stanislav ŠLANG; Petr JANÍČEK; Lubomír PROKEŠ; Josef HAVEL; Virginie NAZABAL a Petr NĚMEC

Vydání

Scientific Reports, Berlin, Nature Research, 2025, 2045-2322

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10402 Inorganic and nuclear chemistry

Stát vydavatele

Německo

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 3.900 v roce 2024

Označené pro přenos do RIV

Ano

Organizační jednotka

Přírodovědecká fakulta

Klíčová slova anglicky

Phase change materials; Scandium doping; Germanium telluride; Thin films

Štítky

14313010, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 10. 11. 2025 09:38, Mgr. Marie Novosadová Šípková, DiS.

Anotace

V originále

Radio frequency magnetron co-sputtering method employing GeTe and Sc targets was exploited for the deposition of Sc doped GeTe thin films. Different characterization techniques (scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction, atomic force microscopy, sheet resistance temperature-dependent measurements, variable angle spectroscopic ellipsometry, and laser ablation time-of-flight mass spectrometry) were used to evaluate the properties of as-deposited (amorphous) and annealed (crystalline) Ge-Te-Sc thin films. Prepared amorphous thin films have Ge48Te52, Ge46Te50Sc4, Ge44Te48Sc8, Ge43Te47Sc10 and Ge41Te45Sc14 chemical composition. The crystallization temperatures were found in the region of ~ 153–272 °C and they increase with scandium content. Upon amorphous-crystalline material phase change, large changes in sheet resistance were measured, with electrical contrast in terms of sheet resistance ratio Rannealed/Ras−deposited in the range of 1.37.10-4 – 9.1.10-7. Simultaneously, huge variations of optical functions were found as demonstrated by absolute values of optical contrast values (at 405 nm) in the range of |Δn|+|Δk| = 1.88–3.75 reaching maximum for layer containing 8 at% of Sc.

Návaznosti

GA22-07635S, projekt VaV

Název: Pokročilé metody přípravy telluridů polokovů a nepřechodných kovů

Investor: Grantová agentura ČR, Pokročilé metody přípravy telluridů polokovů a nepřechodných kovů

90237, velká výzkumná infrastruktura

Název: CEMNAT III

Citovat

BOUŠKA, Marek; Jan GUTWIRTH; Kamil BEČVÁŘ; Vladimír KUCEK; Stanislav ŠLANG; Petr JANÍČEK; Lubomír PROKEŠ; Josef HAVEL; Virginie NAZABAL a Petr NĚMEC. Sc-doped GeTe thin films prepared by radio-frequency magnetron sputtering. Scientific Reports. Berlin: Nature Research, 2025, roč. 15, č. 1, s. 627-634. ISSN 2045-2322. Dostupné z: https://doi.org/10.1038/s41598-024-84963-3.

@article{2532064,
   author = {Bouška, Marek and Gutwirth, Jan and Bečvář, Kamil and Kucek, Vladimír and Šlang, Stanislav and Janíček, Petr and Prokeš, Lubomír and HAVEL, Josef and Nazabal, Virginie and Němec, Petr},
   article_location = {Berlin},
   article_number = {1},
   doi = {https://doi.org/10.1038/s41598-024-84963-3},
   keywords = {Phase change materials; Scandium doping; Germanium telluride; Thin films},
   language = {eng},
   issn = {2045-2322},
   journal = {Scientific Reports},
   title = {Sc-doped GeTe thin films prepared by radio-frequency magnetron sputtering},
   url = {https://www.nature.com/articles/s41598-024-84963-3},
   volume = {15},
   year = {2025}
}

TY  - JOUR
ID  - 2532064
AU  - Bouška, Marek - Gutwirth, Jan - Bečvář, Kamil - Kucek, Vladimír - Šlang, Stanislav - Janíček, Petr - Prokeš, Lubomír - HAVEL, Josef - Nazabal, Virginie - Němec, Petr
PY  - 2025
TI  - Sc-doped GeTe thin films prepared by radio-frequency magnetron sputtering
JF  - Scientific Reports
VL  - 15
IS  - 1
SP  - 627
EP  - 627
PB  - Nature Research
SN  - 20452322
KW  - Phase change materials
KW  - Scandium doping
KW  - Germanium telluride
KW  - Thin films
UR  - https://www.nature.com/articles/s41598-024-84963-3
N2  - Radio frequency magnetron co-sputtering method employing GeTe and Sc targets was exploited for the deposition of Sc doped GeTe thin films. Different characterization techniques (scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction, atomic force microscopy, sheet resistance temperature-dependent measurements, variable angle spectroscopic ellipsometry, and laser ablation time-of-flight mass spectrometry) were used to evaluate the properties of as-deposited (amorphous) and annealed (crystalline) Ge-Te-Sc thin films. Prepared amorphous thin films have Ge48Te52, Ge46Te50Sc4, Ge44Te48Sc8, Ge43Te47Sc10 and Ge41Te45Sc14 chemical composition. The crystallization temperatures were found in the region of ~ 153–272 °C and they increase with scandium content. Upon amorphous-crystalline material phase change, large changes in sheet resistance were measured, with electrical contrast in terms of sheet resistance ratio Rannealed/Ras−deposited in the range of 1.37.10-4 – 9.1.10-7. Simultaneously, huge variations of optical functions were found as demonstrated by absolute values of optical contrast values (at 405 nm) in the range of |Δn|+|Δk| = 1.88–3.75 reaching maximum for layer containing 8 at% of Sc.
ER  -

BOUŠKA, Marek; Jan GUTWIRTH; Kamil BEČVÁŘ; Vladimír KUCEK; Stanislav ŠLANG; Petr JANÍČEK; Lubomír PROKEŠ; Josef HAVEL; Virginie NAZABAL a Petr NĚMEC. Sc-doped GeTe thin films prepared by radio-frequency magnetron sputtering. \textit{Scientific Reports}. Berlin: Nature Research, 2025, roč.~15, č.~1, s.~627-634. ISSN~2045-2322. Dostupné z: https://doi.org/10.1038/s41598-024-84963-3.

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