Manganese-doped NaKSO4 single crystals for sustainable
high-performance nonlinear optical, superior dielectric and
photonic applications

J 2026

Manganese-doped NaKSO4 single crystals for sustainable high-performance nonlinear optical, superior dielectric and photonic applications

VENKATACHALAM, N.; M. PRABHAHARAN; D. DULASIMATHI; Muthumareeswaran MUTHURAMAMOORTHY; Thanka Rajan SENTHIL PERUMAL et al.

Základní údaje

Originální název

Manganese-doped NaKSO4 single crystals for sustainable high-performance nonlinear optical, superior dielectric and photonic applications

Autoři

VENKATACHALAM, N.; M. PRABHAHARAN; D. DULASIMATHI; Muthumareeswaran MUTHURAMAMOORTHY a Thanka Rajan SENTHIL PERUMAL

Vydání

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, SPRINGER, 2026, 0957-4522

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10300 1.3 Physical sciences

Stát vydavatele

Nizozemské království

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 2.800 v roce 2024

Označené pro přenos do RIV

Ano

Organizační jednotka

Přírodovědecká fakulta

Klíčová slova anglicky

Mn-doped NaKSO4 single crystals; Third-order nonlinear optics

Štítky

14312030, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 31. 3. 2026 12:30, Mgr. Marie Novosadová Šípková, DiS.

Anotace

V originále

Manganese-doped sodium potassium sulfate (Mn: NaKSO4) single crystals were successfully grown by the slow evaporation solution growth technique at room temperature, targeting sustainable material for high-performance nonlinear optical (NLO) and photonic applications. Single-crystal X-ray diffraction confirmed that the doped crystals crystallize in the hexagonal system, with slight lattice expansion indicating effective Mn2⁺ incorporation. X-ray photoelectron spectroscopy verified the elemental composition and stable divalent oxidation state of manganese, confirming its substitutional incorporation without secondary phase formation. The laser damage threshold analysis revealed a high-power density tolerance of 8.86 GW/cm⁻2, demonstrating excellent resistance to intense laser irradiation and suitability for high-power optoelectronic devices. Dielectric investigations showed a moderate dielectric constant with remarkably low dielectric loss at higher frequencies and temperatures, reflecting reduced energy dissipation and enhanced polarization efficiency. Third order nonlinear optical properties were evaluated using the Z-scan technique, yielding an enhanced nonlinear refractive index and a large third order susceptibility of 2.283 × 10⁻11 esu, significantly exceeding that of conventional KDP crystals. The enhanced NLO response is attributed to Mn-induced electronic polarizability. The combined high laser damage resistance, low dielectric loss, and strong third order nonlinearity establish Mn doped NaKSO₄ as an environmentally benign and efficient photonic material for advanced optoelectronic applications.

Citovat

VENKATACHALAM, N.; M. PRABHAHARAN; D. DULASIMATHI; Muthumareeswaran MUTHURAMAMOORTHY a Thanka Rajan SENTHIL PERUMAL. Manganese-doped NaKSO4 single crystals for sustainable high-performance nonlinear optical, superior dielectric and photonic applications. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. SPRINGER, 2026, roč. 37, č. 8, s. 1-12. ISSN 0957-4522. Dostupné z: https://doi.org/10.1007/s10854-026-16997-4.

@article{2562439,
   author = {Venkatachalam, N. and Prabhaharan, M. and Dulasimathi, D. and Muthuramamoorthy, Muthumareeswaran and Senthil Perumal, Thanka Rajan},
   article_number = {8},
   doi = {https://doi.org/10.1007/s10854-026-16997-4},
   keywords = {Mn-doped NaKSO4 single crystals; Third-order nonlinear optics},
   language = {eng},
   issn = {0957-4522},
   journal = {JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS},
   title = {Manganese-doped NaKSO4 single crystals for sustainable high-performance nonlinear optical, superior dielectric and photonic applications},
   url = {https://link.springer.com/article/10.1007/s10854-026-16997-4},
   volume = {37},
   year = {2026}
}

TY  - JOUR
ID  - 2562439
AU  - Venkatachalam, N. - Prabhaharan, M. - Dulasimathi, D. - Muthuramamoorthy, Muthumareeswaran - Senthil Perumal, Thanka Rajan
PY  - 2026
TI  - Manganese-doped NaKSO4 single crystals for sustainable high-performance nonlinear optical, superior dielectric and photonic applications
JF  - JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
VL  - 37
IS  - 8
SP  - 1-12
EP  - 1-12
PB  - SPRINGER
SN  - 09574522
KW  - Mn-doped NaKSO4 single crystals
KW  - Third-order nonlinear optics
UR  - https://link.springer.com/article/10.1007/s10854-026-16997-4
N2  - Manganese-doped sodium potassium sulfate (Mn: NaKSO4) single crystals were successfully grown by the slow evaporation solution growth technique at room temperature, targeting sustainable material for high-performance nonlinear optical (NLO) and photonic applications. Single-crystal X-ray diffraction confirmed that the doped crystals crystallize in the hexagonal system, with slight lattice expansion indicating effective Mn2⁺ incorporation. X-ray photoelectron spectroscopy verified the elemental composition and stable divalent oxidation state of manganese, confirming its substitutional incorporation without secondary phase formation. The laser damage threshold analysis revealed a high-power density tolerance of 8.86 GW/cm⁻2, demonstrating excellent resistance to intense laser irradiation and suitability for high-power optoelectronic devices. Dielectric investigations showed a moderate dielectric constant with remarkably low dielectric loss at higher frequencies and temperatures, reflecting reduced energy dissipation and enhanced polarization efficiency. Third order nonlinear optical properties were evaluated using the Z-scan technique, yielding an enhanced nonlinear refractive index and a large third order susceptibility of 2.283 × 10⁻11 esu, significantly exceeding that of conventional KDP crystals. The enhanced NLO response is attributed to Mn-induced electronic polarizability. The combined high laser damage resistance, low dielectric loss, and strong third order nonlinearity establish Mn doped NaKSO₄ as an environmentally benign and efficient photonic material for advanced optoelectronic applications.
ER  -

VENKATACHALAM, N.; M. PRABHAHARAN; D. DULASIMATHI; Muthumareeswaran MUTHURAMAMOORTHY a Thanka Rajan SENTHIL PERUMAL. Manganese-doped NaKSO4 single crystals for sustainable high-performance nonlinear optical, superior dielectric and photonic applications. \textit{JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS}. SPRINGER, 2026, roč.~37, č.~8, s.~1-12. ISSN~0957-4522. Dostupné z: https://doi.org/10.1007/s10854-026-16997-4.

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