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@article{362573,
author = {Bochníček, Zdeněk and Vávra, Ivo},
article_number = {10A},
keywords = {Thermal stability; x-ray reflection; interdiffusion; multilayers},
language = {eng},
issn = {0022-3727},
journal = {J. Phys. D: Appl. Phys.},
title = {Thermal stability of partially crystalline Nb/Si multilayers},
volume = {34},
year = {2001}
}
TY - JOUR
ID - 362573
AU - Bochníček, Zdeněk - Vávra, Ivo
PY - 2001
TI - Thermal stability of partially crystalline Nb/Si multilayers
JF - J. Phys. D: Appl. Phys.
VL - 34
IS - 10A
SP - A214
EP - A214
SN - 00223727
KW - Thermal stability
KW - x-ray reflection
KW - interdiffusion
KW - multilayers
N2 - The thermal stability of [Nb(6.0 nm)/Si(2.0 nm)*50 (*100) multilayers with partially crystalline Nb sublayer deposited onto an (001) oxidized Si wafer has been studied by in situ x-ray reflectivity, ex situ x-ray diffraction, transmission electron microscopy and measurement of low temperature resistivity in annealing at the temperature range up to 450degC. It has been shown that the annealing leads to interface shift without any significant change of interface roughness, which was explained by the diffusion of Si atoms into Nb sublayer. The densification of the multilayer was attributed to creation of Nb3Si phase at Nb/Si interface; presence of this phase was proved by electron diffraction. Annealing up to 250degC has practically no influence on superconductivity of the system though the structure changes are well detectable.
ER -
BOCHNÍČEK, Zdeněk a Ivo VÁVRA. Thermal stability of partially crystalline Nb/Si multilayers. \textit{J. Phys. D: Appl. Phys.}. 2001, roč.~34, 10A, s.~A214, 5 s. ISSN~0022-3727.
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