| ZAJÍČKOVÁ, Lenka, Kateřina VELTRUSKÁ, Nataliya TSUD a Daniel FRANTA. XPS and Ellipsometric Study of DLC/Silicon Interface. Vacuum. USA: ELSEVIER (PERGAMON), 2001, roč. 61, 2-4, s. 269-273. ISSN 0042-207X. |
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@article{366095,
author = {Zajíčková, Lenka and Veltruská, Kateřina and Tsud, Nataliya and Franta, Daniel},
article_location = {USA},
article_number = {2-4},
keywords = {DLC films; XPS; Ellipsometry; Interface},
language = {eng},
issn = {0042-207X},
journal = {Vacuum},
title = {XPS and Ellipsometric Study of DLC/Silicon Interface},
url = {http://hydra.physics.muni.cz/~franta/bib/VAC61_269.html},
volume = {61},
year = {2001}
}
TY - JOUR
ID - 366095
AU - Zajíčková, Lenka - Veltruská, Kateřina - Tsud, Nataliya - Franta, Daniel
PY - 2001
TI - XPS and Ellipsometric Study of DLC/Silicon Interface
JF - Vacuum
VL - 61
IS - 2-4
SP - 269-273
EP - 269-273
PB - ELSEVIER (PERGAMON)
SN - 0042207X
KW - DLC films
KW - XPS
KW - Ellipsometry
KW - Interface
UR - http://hydra.physics.muni.cz/~franta/bib/VAC61_269.html
N2 - Diamond-like carbon (DLC) films were prepared by plasma enhanced CVD from the mixture of methane and argon on silicon substrates. Films were characterized by multi-sample modification of variable angle spectroscopic ellipsometry. The ellipsometry showed that there is a transition interlayer between the DLC film and the silicon substrate that cannot be attributed to a thin silicon dioxide layer but rather to amorphous silicon and/or modified oxide layer. TRIM calculations revealed that argon or carbon ions could not produce a significant layer of amorphous silicon because the depth of target atom displacements is bellow the thickness of a native oxide layer. The chemical composition of a DLC film profile including a DLC/silicon interface was studied by X-ray photoelectron spectroscopy (XPS) coupled with an argon sputtering of the 34 nm thick DLC film. The DLC/silicon interface composed from less than 6 % of oxygen and gradually decreasing and increasing carbon and silicon percentage, respectively.
ER -
ZAJÍČKOVÁ, Lenka, Kateřina VELTRUSKÁ, Nataliya TSUD a Daniel FRANTA. XPS and Ellipsometric Study of DLC/Silicon Interface. \textit{Vacuum}. USA: ELSEVIER (PERGAMON), 2001, roč.~61, 2-4, s.~269-273. ISSN~0042-207X.
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