2001
TEM investigation of self-organized PbSe quantum dots as a function of spacer layer thickness and growth temperature
KANG, H.H.; G. SPRINGHOLZ; V. HOLY a G. BAUERZákladní údaje
Originální název
TEM investigation of self-organized PbSe quantum dots as a function of spacer layer thickness and growth temperature
Autoři
KANG, H.H.; G. SPRINGHOLZ; V. HOLY a G. BAUER
Vydání
Materials Science and Engineering, Lausanne, ELSEVIER SCIENCE SA, 2001, 0921-5107
Další údaje
Jazyk
angličtina
Typ výsledku
Článek v odborném periodiku
Obor
10302 Condensed matter physics
Stát vydavatele
Česká republika
Utajení
není předmětem státního či obchodního tajemství
Impakt faktor
Impact factor: 1.022
Kód RIV
RIV/00216224:14310/01:00005201
Organizační jednotka
Přírodovědecká fakulta
UT WoS
000168260800024
Klíčová slova anglicky
ISLANDS; SUPERLATTICES; STRAIN; GAAS
Štítky
Změněno: 16. 1. 2002 08:32, prof. RNDr. Václav Holý, CSc.
Anotace
V originále
PbSe quantum dot/PbEuTe superlattices were grown on PbTe/BaF2(111) using molecular beam epitaxy. The spacer thickness was varied From 32.4 to 312 nm and the growth temperature was 335 or 380 degreesC. Three different dot stacking sequences form with either vertical, face-centered cubic like or disordered stacking sequence along the [111] growth direction. The different stacking sequence can be controlled by the thickness of the spacer layer and the growth temperature, The dots are fully strained and the shape of the dots is either triangular pyramids or dome like depending on the spacer layer thickness. An analysis of the lateral and vertical correlation of the dots as well as the size and shape of the buried dots with respect to spacer thickness and growth temperature is presented.
Návaznosti
| GA202/00/0354, projekt VaV |
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| VS96102, projekt VaV |
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