2001
X-ray diffraction from CuPt-ordered III-V ternary semiconductor alloy films
LI, J. H.; J. KULIK a V. HOLYZákladní údaje
Originální název
X-ray diffraction from CuPt-ordered III-V ternary semiconductor alloy films
Autoři
LI, J. H.; J. KULIK a V. HOLY
Vydání
Phys. Rev. B, USA, The American Phys. Society, 2001, 0163-1829
Další údaje
Jazyk
angličtina
Typ výsledku
Článek v odborném periodiku
Obor
10302 Condensed matter physics
Stát vydavatele
Česká republika
Utajení
není předmětem státního či obchodního tajemství
Impakt faktor
Impact factor: 3.070
Kód RIV
RIV/00216224:14310/01:00005202
Organizační jednotka
Přírodovědecká fakulta
UT WoS
000168215400062
Klíčová slova anglicky
CHEMICAL-VAPOR-DEPOSITION; DOMAIN-STRUCTURES; LENGTH MISMATCH; PHASE EPITAXY; LAYERS; GAINP; GROWTH; PHOTOLUMINESCENCE; MECHANISM
Štítky
Změněno: 16. 1. 2002 08:33, prof. RNDr. Václav Holý, CSc.
Anotace
V originále
A model has been developed to describe x-ray scattering from CuPt-type ordered III-V ternary semiconductor alloys. The model takes into account the size distribution of the two different laminae-shaped variants, the random distribution of antiphase domain boundaries in each variant, and the atomic displacements due to the bond-length difference between the two constitutive binary materials. A synchrotron x-ray source was employed to measure the weak-ordering reflections from CuPt-ordered Ga0.5In0.5P and Al0.5In0.5As samples. By comparing the experimental results and the model calculations, structure information, including the average number of atomic layers in the laminae of each variant, the average antiphase domain size, and the average order parameter in each variant, were obtained. Results from single-variant films and poorly ordered films are also discussed.
Návaznosti
| GA202/00/0354, projekt VaV |
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| VS96102, projekt VaV |
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