2001
Structural investigations on self-organized Si/SiGe islands by grazing incidence small angle X-ray scattering
ROCH, T., Václav HOLÝ a J. STANGLZákladní údaje
Originální název
Structural investigations on self-organized Si/SiGe islands by grazing incidence small angle X-ray scattering
Autoři
ROCH, T., Václav HOLÝ a J. STANGL
Vydání
physica status solidi (b), Berlin, J. Wiley, 2001, 0370-1972
Další údaje
Jazyk
angličtina
Typ výsledku
Článek v odborném periodiku
Obor
10302 Condensed matter physics
Stát vydavatele
Česká republika
Utajení
není předmětem státního či obchodního tajemství
Impakt faktor
Impact factor: 0.873
Kód RIV
RIV/00216224:14310/01:00005204
Organizační jednotka
Přírodovědecká fakulta
UT WoS
000167827200049
Klíčová slova anglicky
STRAIN
Štítky
Změněno: 16. 1. 2002 08:31, prof. RNDr. Václav Holý, CSc.
Anotace
V originále
We present a novel technique, based on grazing incidence small angle X-ray scattering (GISAXS)with which information on the shape and the lateral correlation of buried islands can be obtained. The GISAXS measurements were performed on Ge-rich islands grown by molecular beam epitaxy on (001) vicinal substrates with a miscut 2 degrees along the [100] direction. By varying the angle of incidence, GISAXS data sets were obtained for different information depths. These data were analysed quantitatively using a model based on the distorted wave Born approximation. In order to demonstrate the capabilities offered by this technique a 20 period Si/SiGe island multilayer sample was investigated before and after an annealing step at about 750 degreesC for 80 min. The GISAXS data show that the islands change their shape after annealing. For the top island layer a comparison of the GISAXS data with atomic force microscopy topographs was made.
Návaznosti
| GA202/00/0354, projekt VaV |
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| MSM 143100002, záměr |
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| VS96102, projekt VaV |
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