ROCH, T., Václav HOLÝ and J. STANGL. Structural investigations on self-organized Si/SiGe islands by grazing incidence small angle X-ray scattering. physica status solidi (b). Berlin: J. Wiley, 2001, vol. 224, No 1, p. 241-245. ISSN 0370-1972.
Other formats:   BibTeX LaTeX RIS
Basic information
Original name Structural investigations on self-organized Si/SiGe islands by grazing incidence small angle X-ray scattering
Authors ROCH, T., Václav HOLÝ and J. STANGL.
Edition physica status solidi (b), Berlin, J. Wiley, 2001, 0370-1972.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher Czech Republic
Confidentiality degree is not subject to a state or trade secret
Impact factor Impact factor: 0.873
RIV identification code RIV/00216224:14310/01:00005204
Organization unit Faculty of Science
UT WoS 000167827200049
Keywords in English STRAIN
Tags STRAIN
Changed by Changed by: prof. RNDr. Václav Holý, CSc., učo 1656. Changed: 16/1/2002 08:31.
Abstract
We present a novel technique, based on grazing incidence small angle X-ray scattering (GISAXS)with which information on the shape and the lateral correlation of buried islands can be obtained. The GISAXS measurements were performed on Ge-rich islands grown by molecular beam epitaxy on (001) vicinal substrates with a miscut 2 degrees along the [100] direction. By varying the angle of incidence, GISAXS data sets were obtained for different information depths. These data were analysed quantitatively using a model based on the distorted wave Born approximation. In order to demonstrate the capabilities offered by this technique a 20 period Si/SiGe island multilayer sample was investigated before and after an annealing step at about 750 degreesC for 80 min. The GISAXS data show that the islands change their shape after annealing. For the top island layer a comparison of the GISAXS data with atomic force microscopy topographs was made.
Links
GA202/00/0354, research and development projectName: Procesy samouspořádání rozhraní při epitaxním růstu polovodičových supermřížek
Investor: Czech Science Foundation, Self-organization processes on the interfaces during epitaxial growth of semiconductor superlattices
MSM 143100002, plan (intention)Name: Fyzikální vlastnosti nových materiálů a vrstevnatých struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical properties of new materials and layered structures
VS96102, research and development projectName: Laboratoř tenkých vrstev a nanostruktur
Investor: Ministry of Education, Youth and Sports of the CR, Laboratory of thin films and nanostructures
PrintDisplayed: 22/6/2024 11:35