Characterization of the boundaries of thin films of TiO2 by
atomic force microscopy and optical methods

J 2002

Characterization of the boundaries of thin films of TiO2 by atomic force microscopy and optical methods

FRANTA, Daniel, Ivan OHLÍDAL, Petr KLAPETEK a Pavel POKORNÝ

Základní údaje

Originální název

Characterization of the boundaries of thin films of TiO2 by atomic force microscopy and optical methods

Autoři

FRANTA, Daniel (203 Česká republika), Ivan OHLÍDAL (203 Česká republika, garant), Petr KLAPETEK (203 Česká republika) a Pavel POKORNÝ (203 Česká republika)

Vydání

Surface and Interface Analysis, USA, John Wiley & Sons, 2002, 0142-2421

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 1.071

Kód RIV

RIV/00216224:14310/02:00007050

Organizační jednotka

Přírodovědecká fakulta

UT WoS

000177885900166

Klíčová slova anglicky

TiO2 thin films; optical characterization; AFM; boundary roughness

Štítky

AFM, boundary roughness, optical characterization, TiO2 thin films

Změněno: 25. 12. 2003 01:05, Mgr. Daniel Franta, Ph.D.

Anotace

V originále

In this paper slight roughness of the upper boundaries of TiO2 thin films prepared on substrates formed by single-crystal silicon is studied. Atomic force microscopy (AFM) and an optical method based on combining variable-angle spectroscopic ellipsometry and near-normal spectroscopic reflectometry are used for this purpose. It is shown that the values of the basic statistical quantities characterizing this roughness depend quite strongly on the values of the thicknesses of these films (they increase with increasing thickness). Differences observed between the values of the basic statistical parameters determined by AFM and the optical method are explained. It is also shown that the TiO2 films exhibit an inhomogeneity represented by a profile of the complex refractive index.

Návaznosti

GA101/01/1104, projekt VaV

Název: Realizace laboratorního vzoru zařízení pro měření drsnosti povrchu metodou holografické interferometrie

Investor: Grantová agentura ČR, Realizace laboratorního vzoru zařízení pro měření drsnosti povrchu metodou holografické interferometrie

Citovat

FRANTA, Daniel, Ivan OHLÍDAL, Petr KLAPETEK a Pavel POKORNÝ. Characterization of the boundaries of thin films of TiO2 by atomic force microscopy and optical methods. Surface and Interface Analysis. USA: John Wiley & Sons, 2002, roč. 34, č. 1, s. 759-762. ISSN 0142-2421.

@article{407667,
   author = {Franta, Daniel and Ohlídal, Ivan and Klapetek, Petr and Pokorný, Pavel},
   article_location = {USA},
   article_number = {1},
   keywords = {TiO2 thin films; optical characterization; AFM; boundary roughness},
   language = {eng},
   issn = {0142-2421},
   journal = {Surface and Interface Analysis},
   title = {Characterization of the boundaries of thin films of TiO2 by atomic force microscopy and optical methods},
   url = {http://hydra.physics.muni.cz/~franta/bib/SIA34_759.html},
   volume = {34},
   year = {2002}
}

TY  - JOUR
ID  - 407667
AU  - Franta, Daniel - Ohlídal, Ivan - Klapetek, Petr - Pokorný, Pavel
PY  - 2002
TI  - Characterization of the boundaries of thin films of TiO2 by atomic force microscopy and optical methods
JF  - Surface and Interface Analysis
VL  - 34
IS  - 1
SP  - 759-762
EP  - 759-762
PB  - John Wiley & Sons
SN  - 01422421
KW  - TiO2 thin films
KW  - optical characterization
KW  - AFM
KW  - boundary roughness
UR  - http://hydra.physics.muni.cz/~franta/bib/SIA34_759.html
N2  - In this paper slight roughness of the upper boundaries of TiO2 thin films prepared on substrates formed by single-crystal silicon is studied. Atomic force microscopy (AFM) and an optical method based on combining variable-angle spectroscopic ellipsometry and near-normal spectroscopic reflectometry are used for this purpose. It is shown that the values of the basic statistical quantities characterizing this roughness depend quite strongly on the values of the thicknesses of these films (they increase with increasing thickness). Differences observed between the values of the basic statistical parameters determined by AFM and the optical method are explained. It is also shown that the TiO2 films exhibit an inhomogeneity represented by a profile of the complex refractive index.
ER  -

FRANTA, Daniel, Ivan OHLÍDAL, Petr KLAPETEK a Pavel POKORNÝ. Characterization of the boundaries of thin films of TiO2 by atomic force microscopy and optical methods. \textit{Surface and Interface Analysis}. USA: John Wiley \&{} Sons, 2002, roč.~34, č.~1, s.~759-762. ISSN~0142-2421.

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