Expression of the optical constants of chalcogenide thin films
using the new parameterization dispersion model

J 2003

Expression of the optical constants of chalcogenide thin films using the new parameterization dispersion model

FRANTA, Daniel; Ivan OHLÍDAL; Miloslav FRUMAR a Jaroslav JEDELSKÝ

Základní údaje

Originální název

Expression of the optical constants of chalcogenide thin films using the new parameterization dispersion model

Autoři

FRANTA, Daniel; Ivan OHLÍDAL; Miloslav FRUMAR a Jaroslav JEDELSKÝ

Vydání

Applied Surface Science, USA, ELSEVIER (NORTH-HOLLAND), 2003, 0169-4332

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 1.284

Označené pro přenos do RIV

Ano

Kód RIV

RIV/00216224:14310/03:00008103

Organizační jednotka

Přírodovědecká fakulta

UT WoS

000183967200022

Klíčová slova anglicky

Dispersion model of the optical constants; Amorphous solids; Chalcogenide thin films

Štítky

Amorphous solids, Chalcogenide thin films

Změněno: 25. 12. 2003 01:20, Mgr. Daniel Franta, Ph.D.

Anotace

V originále

In this paper, a new dispersion model of the optical constants of amorphous solids enabling us to perform an efficient parameterization of the spectral dependences of the optical constants of chalcogenide thin films will be presented. This dispersion model is based on mathematical modeling the density of electronic states (DOS) corresponding to both the valence and conduction bands. The imaginary part of the dielectric function is then calculated by the numerical convolution of the DOS. The real part of the dielectric function is calculated using the corresponding Kramers-Kronig (KK) relation in a suitable numerical way. Moreover, the existence of the transitions between the localized states inside the band gap and the extended states inside both the valence and conduction bands is also taken into account using the corresponding convolutions. Thus, the dispersion model presented includes the absorption corresponding to the Urbach and Tauc regions. Then the dispersion model described allows to interpret spectroellipsometric and spectrophotometric data measured for the chalcogenide thin films within the wide spectral region (200-900 nm).

Návaznosti

GA203/00/0085, projekt VaV

Název: Optické vlastnosti skel a amorfních tenkých vrstev sulfidů a selenidů

Investor: Grantová agentura ČR, Optické vlastnosti skel a amorfních tenkých vrstev sulfidů a selenidů

Citovat

FRANTA, Daniel; Ivan OHLÍDAL; Miloslav FRUMAR a Jaroslav JEDELSKÝ. Expression of the optical constants of chalcogenide thin films using the new parameterization dispersion model. Applied Surface Science. USA: ELSEVIER (NORTH-HOLLAND), 2003, roč. 212-213, č. 1, s. 116-121. ISSN 0169-4332.

@article{487590,
   author = {Franta, Daniel and Ohlídal, Ivan and Frumar, Miloslav and Jedelský, Jaroslav},
   article_location = {USA},
   article_number = {1},
   keywords = {Dispersion model of the optical constants; Amorphous solids; Chalcogenide thin films},
   language = {eng},
   issn = {0169-4332},
   journal = {Applied Surface Science},
   title = {Expression of the optical constants of chalcogenide thin films using the new parameterization dispersion model},
   url = {http://hydra.physics.muni.cz/~franta/bib/ASS212_116.html},
   volume = {212-213},
   year = {2003}
}

TY  - JOUR
ID  - 487590
AU  - Franta, Daniel - Ohlídal, Ivan - Frumar, Miloslav - Jedelský, Jaroslav
PY  - 2003
TI  - Expression of the optical constants of chalcogenide thin films using the new parameterization dispersion model
JF  - Applied Surface Science
VL  - 212-213
IS  - 1
SP  - 116-121
EP  - 116-121
PB  - ELSEVIER (NORTH-HOLLAND)
SN  - 01694332
KW  - Dispersion model of the optical constants
KW  - Amorphous solids
KW  - Chalcogenide thin films
UR  - http://hydra.physics.muni.cz/~franta/bib/ASS212_116.html
N2  - In this paper, a new dispersion model of the optical constants of amorphous solids enabling us to perform an efficient parameterization of the spectral dependences of the optical constants of chalcogenide thin films will be presented. This dispersion model is based on mathematical modeling the density of electronic states (DOS) corresponding to both the valence and conduction bands. The imaginary part of the dielectric function is then calculated by the numerical convolution of the DOS. The real part of the dielectric function is calculated using the corresponding Kramers-Kronig (KK) relation in a suitable numerical way. Moreover, the existence of the transitions between the localized states inside the band gap and the extended states inside both the valence and conduction bands is also taken into account using the corresponding convolutions. Thus, the dispersion model presented includes the absorption corresponding to the Urbach and Tauc regions. Then the dispersion model described allows to interpret spectroellipsometric and spectrophotometric data measured for the chalcogenide thin films within the wide spectral region (200-900 nm).
ER  -

FRANTA, Daniel; Ivan OHLÍDAL; Miloslav FRUMAR a Jaroslav JEDELSKÝ. Expression of the optical constants of chalcogenide thin films using the new parameterization dispersion model. \textit{Applied Surface Science}. USA: ELSEVIER (NORTH-HOLLAND), 2003, roč.~212-213, č.~1, s.~116-121. ISSN~0169-4332.

Přehled o publikaci