ŠIK, Jan, Michal LORENC a Richard ŠTOUDEK. Nitrogen in Czochralski-grown silicon. In SILICON 2002, Rožnov pod Radhostěm, TECON Scientific, editor K. Vojtěchovský. Neuveden: Neuveden, 2002, s. 125-128. |
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@inproceedings{488314, author = {Šik, Jan and Lorenc, Michal and Štoudek, Richard}, address = {Neuveden}, booktitle = {SILICON 2002, Rožnov pod Radhostěm, TECON Scientific, editor K. Vojtěchovský}, keywords = {silicon; nitrogen}, language = {eng}, location = {Neuveden}, pages = {125-128}, publisher = {Neuveden}, title = {Nitrogen in Czochralski-grown silicon}, year = {2002} }
TY - JOUR ID - 488314 AU - Šik, Jan - Lorenc, Michal - Štoudek, Richard PY - 2002 TI - Nitrogen in Czochralski-grown silicon PB - Neuveden CY - Neuveden KW - silicon KW - nitrogen N2 - Fourier transform infrared spectroscopy (FTIR) and secondary ion mass spectroscopy (SIMS) are used to study nitrogen-doped Czochralski-grown (CZ) crystal. We observe nitrogen-related vibrational modes typical for CZ silicon and estimate nitrogen content to be 1.6x10^15 cm-3 from its quantitative analysis. This value is in a good agreement with result of 2.4x10^15 cm-3 from calculations assuming constant segregation coefficient 7x10^(-4). On the other hand, SIMS measurements give much higher value of 8.3x10^15 cm-3. Only 4-5% of nitrogen occupy substitutional sites. We also observe an obstruction of dislocation movement during crystal cooling. ER -
ŠIK, Jan, Michal LORENC a Richard ŠTOUDEK. Nitrogen in Czochralski-grown silicon. In \textit{SILICON 2002, Rožnov pod Radhostěm, TECON Scientific, editor K. Vojtěchovský}. Neuveden: Neuveden, 2002, s.~125-128.
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