HARTMANNOVÁ, Mária, Martin JERGEL, Vladislav NAVRÁTIL, Karel NAVRÁTIL, Katarina GMUCOVÁ, F.C. GANDARILLA, Jan ZEMEK, Stefan CHROMIK and Frantiaek KUNDRACIK. Effect of Structural Imperfections on the Characteristics of YSZ Dielectric Layers Grown by E-beam Evaporation fron the Crystalline Taggets. In Acta Physica Slovaca. I. Bratislava: Institute of Physics, SAS, Bratislava, Slovakia, 2005, p. 247-259. ISBN 5-94691-216-X.
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Basic information
Original name Effect of Structural Imperfections on the Characteristics of YSZ Dielectric Layers Grown by E-beam Evaporation fron the Crystalline Taggets
Name in Czech Vliv strukturních nedokonalostí na charakteristiky YSZ dielektrických vrstev
Authors HARTMANNOVÁ, Mária (703 Slovakia), Martin JERGEL (703 Slovakia), Vladislav NAVRÁTIL (203 Czech Republic, guarantor), Karel NAVRÁTIL (203 Czech Republic), Katarina GMUCOVÁ (703 Slovakia), F.C. GANDARILLA (724 Spain), Jan ZEMEK (703 Slovakia), Stefan CHROMIK (703 Slovakia) and Frantiaek KUNDRACIK (703 Slovakia).
Edition I. Bratislava, Acta Physica Slovaca, p. 247-259, 13 pp. 2005.
Publisher Institute of Physics, SAS, Bratislava, Slovakia
Other information
Original language English
Type of outcome Proceedings paper
Field of Study 10302 Condensed matter physics
Country of publisher Slovakia
Confidentiality degree is not subject to a state or trade secret
RIV identification code RIV/00216224:14410/05:00013806
Organization unit Faculty of Education
ISBN 5-94691-216-X
Keywords in English Yttria stabilized zirconia; thin films; electrical conductivity; microhardness; refractive index; relative permitivity
Tags Electrical Conductivity, Microhardness, refractive index, relative permitivity, thin films, yttria stabilized zirconia
Tags International impact, Reviewed
Changed by Changed by: prof. RNDr. Vladislav Navrátil, CSc., učo 129. Changed: 25/6/2008 16:47.
Abstract
The films under study were deposited by e-beam evaporation on yttria-stabilized zirconia crystalline samples on the n-doped Si (111) substrate at 750 C. The electrical conductivity and the activation energy as the function of the yttria content indicated the influence of isolated oxygen ion vacancies as well as the associated point defects.The measured microhardness data as well as a high refractive index render from YSZ a promising material for protective coatings and optical applications respectively.
Abstract (in Czech)
Merene vrstvicky byly deponovany pomoci e-beam vyparovani na yttriem stabilizovanych zirkoniovych vzorcich na n-dopovanem Si (111) pri teplote 750 C. Mereni elektricke vodivosti a aktivacni energie v zavislosti na koncentraci yttria ukazuje na pritomnost izolovanych kyslikovych iontovych vakanci a s tim spojenych bodovych poruch. Vyledky mereni mechanickych resp. optickych vlastnosti (mikrotvrdost),resp. index lomu ukazuji na vhodnost vyuziti vrstvicek pro ochranné ucely.
Links
MSM 143100002, plan (intention)Name: Fyzikální vlastnosti nových materiálů a vrstevnatých struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical properties of new materials and layered structures
MSM 143100003, plan (intention)Name: Studium plazmochemických reakcí v neizotermickém nízkoteplotním plazmatu a jeho interakcí s povrchem pevných látek
Investor: Ministry of Education, Youth and Sports of the CR, Study of plasmachemical reactions in non-isothermic low pressure plasma and its interaction with the surface of solid substrates
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