| HUMLÍČEK, Josef, Vlastimil KŘÁPEK a Jan FIKAR. Anisotropy of Absorption and Luminescence of Multilayer InAs/GaAs Quantum Dots. In CP772, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors. USA: American Institute of Physics, 2005, s. 753-754. ISBN 0-7354-0257--4. |
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@inproceedings{600185,
author = {Humlíček, Josef and Křápek, Vlastimil and Fikar, Jan},
address = {USA},
booktitle = {CP772, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors},
keywords = {quantum dots; photoluminescence},
language = {eng},
location = {USA},
isbn = {0-7354-0257--4},
pages = {753-754},
publisher = {American Institute of Physics},
title = {Anisotropy of Absorption and Luminescence of Multilayer InAs/GaAs Quantum Dots},
year = {2005}
}
TY - JOUR
ID - 600185
AU - Humlíček, Josef - Křápek, Vlastimil - Fikar, Jan
PY - 2005
TI - Anisotropy of Absorption and Luminescence of Multilayer InAs/GaAs Quantum Dots
PB - American Institute of Physics
CY - USA
SN - 0735402574
KW - quantum dots
KW - photoluminescence
N2 - We report here photoluminescence studies of multilayer InAs quantum dot structures grown by MOVPE on (001)-oriented GaAs substrates. AFM measurements reveal prolate shapes of the dots, oriented along the [1-10] direction. Different orientations relative to the interfaces between the GaAs matrix and InAs dots are probed using polarized excitation and detection. We suggest a possible role of local fields in models of the matrix-dot mixtures in the in-plane anisotropic response.
ER -
HUMLÍČEK, Josef, Vlastimil KŘÁPEK a Jan FIKAR. Anisotropy of Absorption and Luminescence of Multilayer InAs/GaAs Quantum Dots. In \textit{CP772, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors}. USA: American Institute of Physics, 2005, s.~753-754. ISBN~0-7354-0257--4.
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