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@inproceedings{600224,
author = {Humlíček, Josef and Křápek, Vlastimil},
address = {USA},
booktitle = {CP772, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors},
keywords = {silico-germanium alloys; infrared ellipsometry},
language = {eng},
location = {USA},
isbn = {0-7354-0257--4},
pages = {113-114},
publisher = {American Institute of Physics},
title = {Infrared Response of Heavily Doped p-type Si and SiGe Alloys from Ellipsometric Measurements},
year = {2005}
}
TY - JOUR
ID - 600224
AU - Humlíček, Josef - Křápek, Vlastimil
PY - 2005
TI - Infrared Response of Heavily Doped p-type Si and SiGe Alloys from Ellipsometric Measurements
PB - American Institute of Physics
CY - USA
SN - 0735402574
KW - silico-germanium alloys
KW - infrared ellipsometry
N2 - We report here ellipsometric spectra of Si and SiGe alloys heavily doped with boron. In the mid-infrared range, the response can be separated into the contributions of free-hole plasma and direct intervalence transitions. The first contribution extrapolates correctly to the zero-frequency resistance, the second is in a good agreement with the 8-band k.p calculation.
ER -
HUMLÍČEK, Josef a Vlastimil KŘÁPEK. Infrared Response of Heavily Doped p-type Si and SiGe Alloys from Ellipsometric Measurements. In \textit{CP772, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors}. USA: American Institute of Physics, 2005, s.~113-114. ISBN~0-7354-0257--4.
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