2007
Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures
HOSPODKOVÁ, Alice; Vlastimil KŘÁPEK; Karla KULDOVÁ a Josef HUMLÍČEKZákladní údaje
Originální název
Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures
Název česky
Fotoluminiscence a magnetofotoluminiscence vertikálně korelovaných kvantových teček InAs/GaAs
Autoři
HOSPODKOVÁ, Alice; Vlastimil KŘÁPEK; Karla KULDOVÁ a Josef HUMLÍČEK
Vydání
Physica E, Amsterdam, Elsevier Science, 2007, 1386-9477
Další údaje
Jazyk
angličtina
Typ výsledku
Článek v odborném periodiku
Obor
10302 Condensed matter physics
Stát vydavatele
Nizozemské království
Utajení
není předmětem státního či obchodního tajemství
Impakt faktor
Impact factor: 0.834
Označené pro přenos do RIV
Ano
Kód RIV
RIV/00216224:14310/07:00021888
Organizační jednotka
Přírodovědecká fakulta
UT WoS
Klíčová slova anglicky
self-assembled quantum dots; photoluminescence; magnetophotoluminescence
Příznaky
Mezinárodní význam, Recenzováno
Změněno: 20. 3. 2008 10:14, prof. RNDr. Josef Humlíček, CSc.
V originále
We report on photoluminescence of a series of vertically stacked multilayer quantum dot structures. Our analysis of the data taken at different excitation powers and in the magnetic field up to 24T yields a useful insight into the electronic structure of the InAs/GaAs quantum dot structures. The data are compared with results of model electronic structure calculations for flat dots, including the effects of the strain field. The calculations suggest that the difference between the energies of the ground and first excited transitions is mainly determined by the lateral dimensions of the dots. A comparison of the experimental results with the theoretical ones reveals an increase of the dot dimensions (both height and diameter) and a decrease of the aspect ratio (height/diameter) with increasing number of the quantum dot layers. For seven layer samples, the wavelength of 1:3 mm has been achieved. The increase of the thickness of the spacing layers between adjacent dot layers leads to a decrease of the lateral dimensions of the dots, accompanied by an increase of the aspect ratio and of the energy separation between the ground and first excited transitions.
Česky
We report on photoluminescence of a series of vertically stacked multilayer quantum dot structures. Our analysis of the data taken at different excitation powers and in the magnetic field up to 24T yields a useful insight into the electronic structure of the InAs/GaAs quantum dot structures. The data are compared with results of model electronic structure calculations for flat dots, including the effects of the strain field. The calculations suggest that the difference between the energies of the ground and first excited transitions is mainly determined by the lateral dimensions of the dots. A comparison of the experimental results with the theoretical ones reveals an increase of the dot dimensions (both height and diameter) and a decrease of the aspect ratio (height/diameter) with increasing number of the quantum dot layers. For seven layer samples, the wavelength of 1:3 mm has been achieved. The increase of the thickness of the spacing layers between adjacent dot layers leads to a decrease of the lateral dimensions of the dots, accompanied by an increase of the aspect ratio and of the energy separation between the ground and first excited transitions.
Návaznosti
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