J 2007

Comparative Study of Films Deposited from HMDSO/O2 in Continuous Wave and Pulsed rf Discharges

ZAJÍČKOVÁ, Lenka, Vilma BURŠÍKOVÁ, Daniel FRANTA, Angelique BOUSQUET, Agnes GRANIER et. al.

Basic information

Original name

Comparative Study of Films Deposited from HMDSO/O2 in Continuous Wave and Pulsed rf Discharges

Name in Czech

Srovnávací studie vrstev připravených z HMDSO/O2 v kontinuálních a pulzních vf výbojích

Authors

ZAJÍČKOVÁ, Lenka (203 Czech Republic, guarantor), Vilma BURŠÍKOVÁ (203 Czech Republic), Daniel FRANTA (203 Czech Republic), Angelique BOUSQUET (250 France), Agnes GRANIER (250 France), Antoine GOULLET (250 France) and Jiří BURŠÍK (203 Czech Republic)

Edition

Plasma processes and polymers, Weinheim, Wiley-VCH, 2007, 1612-8850

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10305 Fluids and plasma physics

Country of publisher

Germany

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

Impact factor

Impact factor: 2.132

RIV identification code

RIV/00216224:14310/07:00022256

Organization unit

Faculty of Science

UT WoS

000207735200058

Keywords in English

PECVD; hexamethyldisiloxane; oxygen; CCP; ICP

Tags

International impact, Reviewed
Změněno: 17/7/2007 17:57, doc. Mgr. Lenka Zajíčková, Ph.D.

Abstract

V originále

We have performed a comparative study of the properties of films deposited in the rf CCP discharges from a mixture of 5% of hexamethyldisiloxane in oxygen at two different pressures 2.5 and 40 Pa in continuous and pulsed modes. Changes in optical and especially mechanical properties of the films were observed due to differing pressure. Slight changes in the properties were also achieved by pulsing the discharge. Films deposited at 2.5 Pa exhibited very low compressive stress and hardness from 5.5 to 6.9 GPa. Soft films of 1.6 GPa maximum hardness possessing a tensile stress and containing more CH3-related groups were deposited at a pressure of 40 Pa. Hard SiO2-like films (11-13.5 GPa) were deposited from the same mixture in the ICP mode of a helicon reactor at the pressure of 0.3 Pa at which the CCP discharge could not be sustained. These films possessed relatively high compressive stress. Increasing off-time up to 15 ms caused a slight decrease in the hardness and in the case of 0.3 Pa ICP films a significant decrease in the compressive stress. The film optical properties were obtained using a model parameterizing the density of states. According to this model, the band gap was found in the range of 7.4-8.2 eV. The films deposited in the CCP exhibited a small absorption peak in UV due to an existence of localized defect states at about 5 eV.

In Czech

Zabývali jsme se srovnávací studií vlastností vrstev připravených ve vf kapacitně vázaném výboji z 5% směsi hexametyldisiloxanu v kyslíku při dvou různých tlacích 2.5 and 40 Pa v kontinuálním a pulzním módu. Změny optických a zejména mechanických vlastností vrstev byly pozorovány v důsledku odlišného tlaku. Malá změna vlastností byla rovněž dosažena pulzováním výboje.

Links

MSM0021622411, plan (intention)
Name: Studium a aplikace plazmochemických reakcí v neizotermickém nízkoteplotním plazmatu a jeho interakcí s povrchem pevných látek
Investor: Ministry of Education, Youth and Sports of the CR, Study and application of plasma chemical reactions in non-isothermic low temperature plasma and its interaction with solid surface
1K05025, research and development project
Name: Příprava nových Si-O(N)-C materiálů plazmochemickou metodou
Investor: Ministry of Education, Youth and Sports of the CR, Synthesis of new Si-O(N)-C materials by plasmachemical methods