MEDUŇA, Mojmír, Jiří NOVÁK, Günther BAUER, Václav HOLÝ, Claudiu FALUB, Soichiro TSUJINO a Detlev GRÜTZMACHER. In situ investigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scattering. Semicond. Sci. Technol. Velká Britanie: IOP Publishing Ltd, 2007, roč. 22, č. 4, s. 447–453. ISSN 0268-1242. |
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@article{720785, author = {Meduňa, Mojmír and Novák, Jiří and Bauer, Günther and Holý, Václav and Falub, Claudiu and Tsujino, Soichiro and Grützmacher, Detlev}, article_location = {Velká Britanie}, article_number = {4}, keywords = {interdiffusion; x-ray diffraction; reflectivity}, language = {eng}, issn = {0268-1242}, journal = {Semicond. Sci. Technol.}, title = {In situ investigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scattering}, volume = {22}, year = {2007} }
TY - JOUR ID - 720785 AU - Meduňa, Mojmír - Novák, Jiří - Bauer, Günther - Holý, Václav - Falub, Claudiu - Tsujino, Soichiro - Grützmacher, Detlev PY - 2007 TI - In situ investigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scattering JF - Semicond. Sci. Technol. VL - 22 IS - 4 SP - 447–453 EP - 447–453 PB - IOP Publishing Ltd SN - 02681242 KW - interdiffusion KW - x-ray diffraction KW - reflectivity N2 - From the temporal evolution of x-ray reflectivity and diffraction data at high temperature, we obtained an evolution of Si-SiGe interfaces induced by diffusion. The results of our experiment demonstrate that the activation energy and diffusion prefactor depend on Ge content linearly and exponentialy. ER -
MEDUŇA, Mojmír, Jiří NOVÁK, Günther BAUER, Václav HOLÝ, Claudiu FALUB, Soichiro TSUJINO a Detlev GRÜTZMACHER. In situ investigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scattering. \textit{Semicond. Sci. Technol.}. Velká Britanie: IOP Publishing Ltd, 2007, roč.~22, č.~4, s.~447–453. ISSN~0268-1242.
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