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@inproceedings{746275,
author = {Všianská, Monika and Legut, Dominik and Šob, Mojmír},
address = {Brno},
booktitle = {Sborník doktorské konference: Víceúrovňový design pokrokových materiálů},
keywords = {Electronic structure; tin; indium; gamma-tin; virtual crystal approximation},
language = {eng},
location = {Brno},
isbn = {978-80-254-0793-6},
pages = {7-14},
publisher = {Ústav fyziky materiálů AVČR},
title = {Elektronová struktura slitin india a cínu},
year = {2007}
}
TY - JOUR
ID - 746275
AU - Všianská, Monika - Legut, Dominik - Šob, Mojmír
PY - 2007
TI - Elektronová struktura slitin india a cínu
PB - Ústav fyziky materiálů AVČR
CY - Brno
SN - 9788025407936
KW - Electronic structure
KW - tin
KW - indium
KW - gamma-tin
KW - virtual crystal approximation
N2 - The InSn system is interesting by the existence of a simple hexagonal phase for compositions from 72 to 87 at% Sn at 25 st.C and from 73 to 85 at% Sn at -150 st.C. These alloys are usually referred to as gamma-Sn. The InSn alloys are disordered in the whole concentration interval. In this contribution, energetics and electronic structure of InSn system is studied from first principles. A simplified version of virtual crystal approximation is employed to describe disorder. It turns out that the present approach is capable of describing phase composition of InSn system in the whole concentration interval. In particular, we are able to reproduce the existence of simple hexagonal phase around 80 at% Sn.
ER -
VŠIANSKÁ, Monika, Dominik LEGUT a Mojmír ŠOB. Elektronová struktura slitin india a cínu. In \textit{Sborník doktorské konference: Víceúrovňový design pokrokových materiálů}. Brno: Ústav fyziky materiálů AVČR, 2007, s.~7-14. ISBN~978-80-254-0793-6.
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