2008
Improved low-k dielectric properties using He/H2 plasma for resist removal
URBANOWICZ, Adam, Denis SHAMIRYAN, Přemysl MARŠÍK, Youssef TRAVALY, Patrick VERDONCK et. al.Základní údaje
Originální název
Improved low-k dielectric properties using He/H2 plasma for resist removal
Název česky
Zlepšení vlastností low-k dilelektrika pomocí He/H2 plazmy pro odtranění resistu
Autoři
URBANOWICZ, Adam (616 Polsko), Denis SHAMIRYAN (56 Belgie), Přemysl MARŠÍK (203 Česká republika, garant), Youssef TRAVALY (56 Belgie), Patrick VERDONCK (56 Belgie), Kris VANSTREELS (56 Belgie), Abdelkarim FERCHICHI (56 Belgie), David DE ROEST (56 Belgie), Hessel SPREY (56 Belgie), Kiyohiro MATSUSHITA (392 Japonsko), Shinya KANEKO (392 Japonsko), N. TSUI (392 Japonsko), Shijian LUO (840 Spojené státy), Orlando ESCORCIA (840 Spojené státy), Ivan BERRY (840 Spojené státy), Carlo WALDFRIED (840 Spojené státy), Stefan DE GENDT (56 Belgie) a Mikhail BAKLANOV (56 Belgie)
Vydání
Advanced Metallization Conference - AMC 2008, 2008
Další údaje
Jazyk
angličtina
Typ výsledku
Prezentace na konferencích
Obor
10302 Condensed matter physics
Stát vydavatele
Spojené státy
Utajení
není předmětem státního či obchodního tajemství
Kód RIV
RIV/00216224:14310/08:00038410
Organizační jednotka
Přírodovědecká fakulta
Klíčová slova anglicky
low-k; strip plasma; porogen residues
Příznaky
Mezinárodní význam
Změněno: 14. 1. 2010 14:53, Mgr. Přemysl Maršík, Ph.D.
V originále
Aurora ELK low-k films, deposited using a PECVD porogen-based process, were treated with 35 s of He/H2 downstream-plasma (DSP) at varied temperatures of 25 C, 200 C, 300 C and 350 C. The plasma modifications were investigated using various physical-chemical methods. Results showed that extended He/H2 DSP plasma exposure at elevated temperature may lead to k-value reduction due to porosity increase without hydrophilisation of the modified layer. Improvement in dielectric constant is accompanied by a small reduction of mechanical strength. The porosity increase was related to removal of porogen residues formed during the ultra-violet (UV) curing. The porogen residue removal signature was reflected in the optical properties in the UV range and the C-depth profile of the investigated low-k material.
Česky
Aurora ELK low-k films, deposited using a PECVD porogen-based process, were treated with 35 s of He/H2 downstream-plasma (DSP) at varied temperatures of 25 C, 200 C, 300 C and 350 C. The plasma modifications were investigated using various physical-chemical methods. Results showed that extended He/H2 DSP plasma exposure at elevated temperature may lead to k-value reduction due to porosity increase without hydrophilisation of the modified layer. Improvement in dielectric constant is accompanied by a small reduction of mechanical strength. The porosity increase was related to removal of porogen residues formed during the ultra-violet (UV) curing. The porogen residue removal signature was reflected in the optical properties in the UV range and the C-depth profile of the investigated low-k material
Návaznosti
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