Lateral shape of InAs/GaAs quantum dots in vertically
correlated structures

J 2007

Lateral shape of InAs/GaAs quantum dots in vertically correlated structures

HOSPODKOVÁ, Alice; Vlastimil KŘÁPEK; Tomáš MATES; Karla KULDOVÁ; Jiří PANGRÁC et al.

Základní údaje

Originální název

Lateral shape of InAs/GaAs quantum dots in vertically correlated structures

Autoři

HOSPODKOVÁ, Alice; Vlastimil KŘÁPEK; Tomáš MATES; Karla KULDOVÁ; Jiří PANGRÁC; Eduard HULICIUS; Jiří OSWALD; Karel MELICHAR; Josef HUMLÍČEK a Tomislav ŠIMEČEK

Vydání

Journal of crystal growth, Amsterdam, Elsevier Science, 2007, 0022-0248

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Japonsko

Utajení

není předmětem státního či obchodního tajemství

Impakt faktor

Impact factor: 1.950

Označené pro přenos do RIV

Ano

Kód RIV

RIV/00216224:14310/07:00028834

Organizační jednotka

Přírodovědecká fakulta

UT WoS

000244622600134

Klíčová slova anglicky

nanostructures; metalorganic vapor phase epitaxy; arsenides; semiconducting III-V materials

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 24. 3. 2010 14:07, Mgr. Vlastimil Křápek, Ph.D.

Anotace

ORIG CZ

V originále

InAs/GaAs quantum dots (QDs) in vertically correlated structures were studied by photoluminescence (PL) and atomic force microscopy (AFM). Samples were grown by low-pressure metalorganic vapor phase epitaxy (LP MOVPE). InAs QDs on the GaAs surface as well as GaAs hillocks covering the underlying QDs are elongated in the [-110] direction. This elongation is caused by higher lateral growth rates of both materials in the [-110] direction on the [100]-oriented substrates. The elongation and curvature of GaAs hillocks is probably the cause of the change of elongation direction of QDs in the upper layers of vertically stacked structures. With greater number of layers, QDs start to be circular. This is potentially a useful tool for controlling QD properties in laser structures.

Česky

InAs/GaAs kvantové tečky

Návaznosti

GA202/06/0718, projekt VaV

Název: Inženýrství kvantových teček

Investor: Grantová agentura ČR, Inženýrství kvantových teček

KJB101630601, projekt VaV

Název: Morfologie kvantových teček a její vliv na elektronovou strukturu

Investor: Akademie věd ČR, Morfologie kvantových teček a její vliv na elektronovou strukturu

Citovat

HOSPODKOVÁ, Alice; Vlastimil KŘÁPEK; Tomáš MATES; Karla KULDOVÁ; Jiří PANGRÁC; Eduard HULICIUS; Jiří OSWALD; Karel MELICHAR; Josef HUMLÍČEK a Tomislav ŠIMEČEK. Lateral shape of InAs/GaAs quantum dots in vertically correlated structures. Journal of crystal growth. Amsterdam: Elsevier Science, 2007, roč. 298, SI, s. 570-573. ISSN 0022-0248.

@article{877196,
   author = {Hospodková, Alice and Křápek, Vlastimil and Mates, Tomáš and Kuldová, Karla and Pangrác, Jiří and Hulicius, Eduard and Oswald, Jiří and Melichar, Karel and Humlíček, Josef and Šimeček, Tomislav},
   article_location = {Amsterdam},
   article_number = {SI},
   keywords = {nanostructures; metalorganic vapor phase epitaxy; arsenides; semiconducting III-V materials},
   language = {eng},
   issn = {0022-0248},
   journal = {Journal of crystal growth},
   title = {Lateral shape of InAs/GaAs quantum dots in vertically correlated structures},
   volume = {298},
   year = {2007}
}

TY  - JOUR
ID  - 877196
AU  - Hospodková, Alice - Křápek, Vlastimil - Mates, Tomáš - Kuldová, Karla - Pangrác, Jiří - Hulicius, Eduard - Oswald, Jiří - Melichar, Karel - Humlíček, Josef - Šimeček, Tomislav
PY  - 2007
TI  - Lateral shape of InAs/GaAs quantum dots in vertically correlated structures
JF  - Journal of crystal growth
VL  - 298
IS  - SI
SP  - 570-573
EP  - 570-573
PB  - Elsevier Science
SN  - 00220248
KW  - nanostructures
KW  - metalorganic vapor phase epitaxy
KW  - arsenides
KW  - semiconducting III-V materials
N2  - InAs/GaAs quantum dots (QDs) in vertically correlated structures were studied by photoluminescence (PL) and atomic force microscopy (AFM). Samples were grown by low-pressure metalorganic vapor phase epitaxy (LP MOVPE). InAs QDs on the GaAs surface as well as GaAs hillocks covering the underlying QDs are elongated in the [-110] direction. This elongation is caused by higher lateral growth rates of both materials in the [-110] direction on the [100]-oriented substrates. The elongation and curvature of GaAs hillocks is probably the cause of the change of elongation direction of QDs in the upper layers of vertically stacked structures. With greater number of layers, QDs start to be circular. This is potentially a useful tool for controlling QD properties in laser structures.
ER  -

HOSPODKOVÁ, Alice; Vlastimil KŘÁPEK; Tomáš MATES; Karla KULDOVÁ; Jiří PANGRÁC; Eduard HULICIUS; Jiří OSWALD; Karel MELICHAR; Josef HUMLÍČEK a Tomislav ŠIMEČEK. Lateral shape of InAs/GaAs quantum dots in vertically correlated structures. \textit{Journal of crystal growth}. Amsterdam: Elsevier Science, 2007, roč.~298, SI, s.~570-573. ISSN~0022-0248.

Přehled o publikaci