| FRANTA, Daniel, David NEČAS, Ivan OHLÍDAL, Martin HRDLIČKA, Martin PAVLIŠTA, Miloslav FRUMAR a Miloslav OHLÍDAL. Combined method of spectroscopic ellipsometry and photometry as an efficient tool for the optical characterisation of chalcogenide thin films. Journal of Optoelectronics and Advanced Materials. Bucharest: INOE & INFM, 2009, roč. 11, č. 12, s. 1891-1898. ISSN 1454-4164. |
Další formáty:
BibTeX
LaTeX
RIS
@article{879780,
author = {Franta, Daniel and Nečas, David and Ohlídal, Ivan and Hrdlička, Martin and Pavlišta, Martin and Frumar, Miloslav and Ohlídal, Miloslav},
article_location = {Bucharest},
article_number = {12},
keywords = {elipsometrie; spektrofotometrie; chalkogenidy; tenké vrstvy},
language = {eng},
issn = {1454-4164},
journal = {Journal of Optoelectronics and Advanced Materials},
title = {Combined method of spectroscopic ellipsometry and photometry as an efficient tool for the optical characterisation of chalcogenide thin films},
volume = {11},
year = {2009}
}
TY - JOUR
ID - 879780
AU - Franta, Daniel - Nečas, David - Ohlídal, Ivan - Hrdlička, Martin - Pavlišta, Martin - Frumar, Miloslav - Ohlídal, Miloslav
PY - 2009
TI - Combined method of spectroscopic ellipsometry and photometry as an efficient tool for the optical characterisation of chalcogenide thin films
JF - Journal of Optoelectronics and Advanced Materials
VL - 11
IS - 12
SP - 1891-1898
EP - 1891-1898
PB - INOE & INFM
SN - 14544164
KW - elipsometrie
KW - spektrofotometrie
KW - chalkogenidy
KW - tenké vrstvy
N2 - The optical characterisation of the As33Se67 and Ge2Sb2Te5 chalcogenide thin films is carried out using the combined method of VASE and SR. This method permits to determine both structural and dispersion parameters describing the thin films exhibiting various defects. The structural model is based on including roughness, overlayers and thickness non-uniformity. The dispersion models are based on parametrisation of the joint density of states. These models, unlike the classical models derived from the Lorentz oscillator model, can describe finite bands which allows to introduce a parameter proportional to the density of electrons. It is shown that this method enables to investigate quantitatively changes in the electronic structure of the materials caused by phase transitions which is demonstrated on the Ge2Sb2Te5. It is shown that the combined method with including true structural and dispersion models is a powerful tool for the optical characterisation of thin films exhibiting disordered structure.
ER -
FRANTA, Daniel, David NEČAS, Ivan OHLÍDAL, Martin HRDLIČKA, Martin PAVLIŠTA, Miloslav FRUMAR a Miloslav OHLÍDAL. Combined method of spectroscopic ellipsometry and photometry as an efficient tool for the optical characterisation of chalcogenide thin films. \textit{Journal of Optoelectronics and Advanced Materials}. Bucharest: INOE \&{} INFM, 2009, roč.~11, č.~12, s.~1891-1898. ISSN~1454-4164.
|
