| LI, Jianhua, Donna W. STOKES, J. C. WICKETT, Ondřej CAHA, Kevin E. BASSLER a Simon C. MOSS. Effect of strain on the growth of InAs/GaSb superlattices: An x-ray diffraction study. Journal of Applied Physics. USA: American Institute of Physics, 2010, roč. 107, č. 12, s. 123504-123512. ISSN 0021-8979. |
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@article{894960,
author = {Li, Jianhua and Stokes, Donna W. and Wickett, J. C. and Caha, Ondřej and Bassler, Kevin E. and Moss, Simon C.},
article_location = {USA},
article_number = {12},
keywords = {layer superlattices; diffusion; lattice},
language = {eng},
issn = {0021-8979},
journal = {Journal of Applied Physics},
title = {Effect of strain on the growth of InAs/GaSb superlattices: An x-ray diffraction study},
volume = {107},
year = {2010}
}
TY - JOUR
ID - 894960
AU - Li, Jianhua - Stokes, Donna W. - Wickett, J. C. - Caha, Ondřej - Bassler, Kevin E. - Moss, Simon C.
PY - 2010
TI - Effect of strain on the growth of InAs/GaSb superlattices: An x-ray diffraction study
JF - Journal of Applied Physics
VL - 107
IS - 12
SP - 123504
EP - 123504
PB - American Institute of Physics
SN - 00218979
KW - layer superlattices
KW - diffusion
KW - lattice
N2 - We present a detailed x-ray diffraction study of the strain in InAs/GaSb superlattices grown by molecular beam epitaxy. The superlattices were grown with either InSb or GaAs interfaces (IFs). We show that the superlattice morphology, either planar or nanostructured, is dependent on the chemical bonds at the heterointerfaces. In both cases, the misfit strain has been determined for the superlattice layers and the IFs. We also determined how the magnitude and sign of this strain is crucial in governing the morphology of the superlattice. Our analysis suggests that the growth of self-assembled nanostructures may be extended to many systems generally thought to have too small a lattice mismatch.
ER -
LI, Jianhua, Donna W. STOKES, J. C. WICKETT, Ondřej CAHA, Kevin E. BASSLER a Simon C. MOSS. Effect of strain on the growth of InAs/GaSb superlattices: An x-ray diffraction study. \textit{Journal of Applied Physics}. USA: American Institute of Physics, 2010, roč.~107, č.~12, s.~123504-123512. ISSN~0021-8979.
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