LI, Jianhua, Donna W. STOKES, J. C. WICKETT, Ondřej CAHA, Kevin E. BASSLER a Simon C. MOSS. Effect of strain on the growth of InAs/GaSb superlattices: An x-ray diffraction study. Journal of Applied Physics. USA: American Institute of Physics, 2010, roč. 107, č. 12, s. 123504-123512. ISSN 0021-8979. |
Další formáty:
BibTeX
LaTeX
RIS
@article{894960, author = {Li, Jianhua and Stokes, Donna W. and Wickett, J. C. and Caha, Ondřej and Bassler, Kevin E. and Moss, Simon C.}, article_location = {USA}, article_number = {12}, keywords = {layer superlattices; diffusion; lattice}, language = {eng}, issn = {0021-8979}, journal = {Journal of Applied Physics}, title = {Effect of strain on the growth of InAs/GaSb superlattices: An x-ray diffraction study}, volume = {107}, year = {2010} }
TY - JOUR ID - 894960 AU - Li, Jianhua - Stokes, Donna W. - Wickett, J. C. - Caha, Ondřej - Bassler, Kevin E. - Moss, Simon C. PY - 2010 TI - Effect of strain on the growth of InAs/GaSb superlattices: An x-ray diffraction study JF - Journal of Applied Physics VL - 107 IS - 12 SP - 123504 EP - 123504 PB - American Institute of Physics SN - 00218979 KW - layer superlattices KW - diffusion KW - lattice N2 - We present a detailed x-ray diffraction study of the strain in InAs/GaSb superlattices grown by molecular beam epitaxy. The superlattices were grown with either InSb or GaAs interfaces (IFs). We show that the superlattice morphology, either planar or nanostructured, is dependent on the chemical bonds at the heterointerfaces. In both cases, the misfit strain has been determined for the superlattice layers and the IFs. We also determined how the magnitude and sign of this strain is crucial in governing the morphology of the superlattice. Our analysis suggests that the growth of self-assembled nanostructures may be extended to many systems generally thought to have too small a lattice mismatch. ER -
LI, Jianhua, Donna W. STOKES, J. C. WICKETT, Ondřej CAHA, Kevin E. BASSLER a Simon C. MOSS. Effect of strain on the growth of InAs/GaSb superlattices: An x-ray diffraction study. \textit{Journal of Applied Physics}. USA: American Institute of Physics, 2010, roč.~107, č.~12, s.~123504-123512. ISSN~0021-8979.
|