| HOSPODKOVÁ, A., E. HULICIUS, J. PANGRÁC, J. OSWALD, J. VYSKOČIL, K. KULDOVÁ, T. ŠIMEČEK, P. HAZDRA a Ondřej CAHA. InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots. Journal of crystal growth. Amsterdam: Elsevier Science, 2010, roč. 312, č. 8, s. 1383-1387. ISSN 0022-0248. |
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@article{894961,
author = {Hospodková, A. and Hulicius, E. and Pangrác, J. and Oswald, J. and Vyskočil, J. and Kuldová, K. and Šimeček, T. and Hazdra, P. and Caha, Ondřej},
article_location = {Amsterdam},
article_number = {8},
keywords = {Low dimensional structures; Photoluminescence; Low-pressure Metalorganic vapor phase epitaxy; InAs/GaAs Quantum dots; Semiconducting III-V materials},
language = {eng},
issn = {0022-0248},
journal = {Journal of crystal growth},
title = {InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots},
volume = {312},
year = {2010}
}
TY - JOUR
ID - 894961
AU - Hospodková, A. - Hulicius, E. - Pangrác, J. - Oswald, J. - Vyskočil, J. - Kuldová, K. - Šimeček, T. - Hazdra, P. - Caha, Ondřej
PY - 2010
TI - InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots
JF - Journal of crystal growth
VL - 312
IS - 8
SP - 1383
EP - 1383
PB - Elsevier Science
SN - 00220248
KW - Low dimensional structures
KW - Photoluminescence
KW - Low-pressure Metalorganic vapor phase epitaxy
KW - InAs/GaAs Quantum dots
KW - Semiconducting III-V materials
N2 - We compare properties of InAs/GaAs quantum dots (QDs) covered by InGaAs or GaAsSb strain reducing layers (SRLs) prepared by metal organic vapor phase epitaxy. Stronger red shift of QD emission was achieved with InGaAs SRL as compared to GaAsSb one with similar strain in the structure. This can be caused by the increase of QD size during InGaAs SRL growth. The heterojunction between InAs QDs and GaAsSb SRL changes from type I to type II between 13% and 15% of Sb in the SRL. Important advantage of GaAsSb SRL can be the possibility to change the overlap of electron and hole wave functions and QD dipole moment orientation by the composition of GaAsSb. We have achieved the highest PL intensity suggesting best wave function overlap near 13% of Sb in the SRL. Band alignment, transition probability and transition energy were calculated to help the interpretation of achieved results.
ER -
HOSPODKOVÁ, A., E. HULICIUS, J. PANGRÁC, J. OSWALD, J. VYSKOČIL, K. KULDOVÁ, T. ŠIMEČEK, P. HAZDRA a Ondřej CAHA. InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots. \textit{Journal of crystal growth}. Amsterdam: Elsevier Science, 2010, roč.~312, č.~8, s.~1383-1387. ISSN~0022-0248.
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