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@article{898232,
author = {Pangavhane, Sachinkumar Dagurao and Houška, Jan and Wágner, M. and Pavlišta, Josef and Havel, Josef},
article_number = {1},
keywords = {LDI TOF MS Clusters},
language = {eng},
issn = {0951-4198},
journal = {Rapid Commun. Mass Spectrom},
title = {Laser ablation of ternary As-S-Se glasses and clusters analysis by time of flight mass spectrometry},
volume = {24},
year = {2010}
}
TY - JOUR
ID - 898232
AU - Pangavhane, Sachinkumar Dagurao - Houška, Jan - Wágner, M. - Pavlišta, Josef - Havel, Josef
PY - 2010
TI - Laser ablation of ternary As-S-Se glasses and clusters analysis by time of flight mass spectrometry
JF - Rapid Commun. Mass Spectrom
VL - 24
IS - 1
PB - Wiley
SN - 09514198
KW - LDI TOF MS Clusters
N2 - Ternary chalcogenide As-S-Se glasses, important for optics, computers, material science and technological applications are often made by pulsed laser deposition (PLD) technology but the plasma composition formed during the process is mostly unknown. Therefore, the formation of clusters in a plasma plume from different glasses was followed by Laser Desorption Ionization (LDI) or Laser Ablation (LA) Time of Flight Mass Spectrometry (TOF MS) in positive and negative ion modes. LA of glasses of different composition leads to the formation of a number of binary AspSq, AspSerq and ternary AspSqSer single charged clusters. Series of clusters with the ratio As:chalcogen = 3:3 (As3S3+, As3S2Se+, As3SSe2+), 3:4 (As3S4+, As3S3Se+, As3S2Se2+, As3SSe3+, As3Se4+), 3:1 (As3S+, As3Se+), and 3:2 (As3S2+, As3SSe+, As3Se2+) being formed from both bulk and PLD deposited nano-layer glass was detected. The stoichiometry of AspSqSer clusters was determined via isotopic envelope analysis and computer modeling. The structure of the clusters is discussed.
ER -
PANGAVHANE, Sachinkumar Dagurao, Jan HOUŠKA, M. WÁGNER, Josef PAVLIŠTA a Josef HAVEL. Laser ablation of ternary As-S-Se glasses and clusters analysis by time of flight mass spectrometry. \textit{Rapid Commun. Mass Spectrom}. Wiley, 2010, roč.~24, č.~1, 95-102. ISSN~0951-4198.
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