Dopant Contrast in Semiconductors as Interpretation Challenge
at Imaging by Electrons

J 2007

Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons

FRANK, Luděk; Filip MIKA; Miloš HOVORKA; D. VALDAITSEV; G. SCHÖNHENSE et al.

Základní údaje

Originální název

Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons

Autoři

FRANK, Luděk; Filip MIKA; Miloš HOVORKA; D. VALDAITSEV; G. SCHÖNHENSE a Ilona MÜLLEROVÁ

Vydání

Materials Transactions, Japonsko, The Japan Institute of Metals, 2007, 1345-9678

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Česká republika

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 1.018

Označené pro přenos do RIV

Organizační jednotka

Přírodovědecká fakulta

UT WoS

000247274100010

Klíčová slova anglicky

electron microscopic contrasts, semiconductors, dopant contrast, scanning electron microscopy, scanning low energy electron microscopy, photoelectron emission microscopy

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 25. 5. 2011 08:58, Mgr. Miloš Hovorka, Ph.D.

Anotace

V originále

Mechanisms responsible for the contrast between differently doped areas in semiconductors, which is observed in electron micrographs, is discussed as regards the key factors determining the sign and magnitude of the contrast. Experimental data obtained by means of the scanning electron microscope (SEM), scanning low energy electron microscope and photoelectron emission microscope are reviewed together with hints following from them for compilation of a model of the contrast mechanism.

Citovat

FRANK, Luděk; Filip MIKA; Miloš HOVORKA; D. VALDAITSEV; G. SCHÖNHENSE a Ilona MÜLLEROVÁ. Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons. Materials Transactions. Japonsko: The Japan Institute of Metals, 2007, roč. 48, č. 5, s. 936-939. ISSN 1345-9678.

@article{898753,
   author = {Frank, Luděk and Mika, Filip and Hovorka, Miloš and Valdaitsev, D. and Schönhense, G. and Müllerová, Ilona},
   article_location = {Japonsko},
   article_number = {5},
   keywords = {electron microscopic contrasts, semiconductors, dopant contrast, scanning electron microscopy, scanning low energy electron microscopy, photoelectron emission microscopy},
   language = {eng},
   issn = {1345-9678},
   journal = {Materials Transactions},
   title = {Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons},
   url = {http://www.jim.or.jp/journal/e/48/05/936.html},
   volume = {48},
   year = {2007}
}

TY  - JOUR
ID  - 898753
AU  - Frank, Luděk - Mika, Filip - Hovorka, Miloš - Valdaitsev, D. - Schönhense, G. - Müllerová, Ilona
PY  - 2007
TI  - Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons
JF  - Materials Transactions
VL  - 48
IS  - 5
SP  - 936-939
EP  - 936-939
PB  - The Japan Institute of Metals
SN  - 13459678
KW  - electron microscopic contrasts, semiconductors, dopant contrast, scanning electron microscopy, scanning low energy electron microscopy, photoelectron emission microscopy
UR  - http://www.jim.or.jp/journal/e/48/05/936.html
N2  - Mechanisms responsible for the contrast between differently doped areas in semiconductors, which is observed in electron micrographs, is discussed as regards the key factors determining the sign and magnitude of the contrast. Experimental data obtained by means of the scanning electron microscope (SEM), scanning low energy electron microscope and photoelectron emission microscope are reviewed together with hints following from them for compilation of a model of the contrast mechanism.
ER  -

FRANK, Luděk; Filip MIKA; Miloš HOVORKA; D. VALDAITSEV; G. SCHÖNHENSE a Ilona MÜLLEROVÁ. Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons. \textit{Materials Transactions}. Japonsko: The Japan Institute of Metals, 2007, roč.~48, č.~5, s.~936-939. ISSN~1345-9678.

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