Porogen residues detection in optical properties of low-k
dielectrics cured by ultraviolet radiation

J 2010

Porogen residues detection in optical properties of low-k dielectrics cured by ultraviolet radiation

MARŠÍK, Přemysl; P. VERDONCK; D. DE ROEST a M.R. BAKLANOV

Základní údaje

Originální název

Porogen residues detection in optical properties of low-k dielectrics cured by ultraviolet radiation

Název česky

Detekce zbytků porogenu v optických vlasnostech low-k dielektrik

Autoři

MARŠÍK, Přemysl; P. VERDONCK; D. DE ROEST a M.R. BAKLANOV

Vydání

Thin Solid Films, UK Oxford, Elsevier science, 2010, 0040-6090

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Velká Británie a Severní Irsko

Utajení

není předmětem státního či obchodního tajemství

Impakt faktor

Impact factor: 1.935

Označené pro přenos do RIV

Ano

Kód RIV

RIV/00216224:14310/10:00047110

Organizační jednotka

Přírodovědecká fakulta

UT WoS

000278242000036

Klíčová slova anglicky

Ellipsometry; Optical properties; Low-k dielectrics; Porosity; Porogen residues

Změněno: 28. 1. 2011 09:18, prof. RNDr. Josef Humlíček, CSc.

Anotace

V originále

The optical properties of low dielectric constant (low-k) films have been determined by variable angle spectroscopic ellipsometry in the range from 2 eV to 9 eV to characterize the process of porogen removal during the UV-cure. The studied carbon doped oxide (SiCOH) porous dielectric films have been prepared by plasma enhanced chemical vapor deposition. The films have been deposited as a composition of a matrix precursor and an organic porogen. After deposition, the films have been cured by thermal annealing and UV irradiation (lambda = 172 urn) to remove the porogen and create a porosity of 33%, reaching a dielectric constant of 2.3. The process of porogen decomposition and removal has been studied on series of low-k samples. UV-cured for various times. Additional samples have been prepared by the deposition and curing of the porogen film, without SiCOH matrix, and the matrix material itself, without porogen. The analysis of the optical response of the porous dielectric as a mixture of matrix material, porogen and voids, together with Fourier transform infrared analysis, allows the sensitive detection of the volume of the porogen and indicates the existence of decomposed porogen residues inside the pores, even for long curing time. The variation of the deposition and curing conditions can control the amount of the porogen residues and the final porosity.

Návaznosti

MSM0021622410, záměr

Název: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Fyzikální a chemické vlastnosti pokročilých materiálů a struktur

Citovat

MARŠÍK, Přemysl; P. VERDONCK; D. DE ROEST a M.R. BAKLANOV. Porogen residues detection in optical properties of low-k dielectrics cured by ultraviolet radiation. Thin Solid Films. UK Oxford: Elsevier science, 2010, roč. 518, č. 15, s. 4266-4272. ISSN 0040-6090.

@article{923260,
   author = {Maršík, Přemysl and Verdonck, P. and De Roest, D. and Baklanov, M.R.},
   article_location = {UK Oxford},
   article_number = {15},
   keywords = {Ellipsometry; Optical properties; Low-k dielectrics; Porosity; Porogen residues},
   language = {eng},
   issn = {0040-6090},
   journal = {Thin Solid Films},
   title = {Porogen residues detection in optical properties of low-k dielectrics cured by ultraviolet radiation},
   volume = {518},
   year = {2010}
}

TY  - JOUR
ID  - 923260
AU  - Maršík, Přemysl - Verdonck, P. - De Roest, D. - Baklanov, M.R.
PY  - 2010
TI  - Porogen residues detection in optical properties of low-k dielectrics cured by ultraviolet radiation
JF  - Thin Solid Films
VL  - 518
IS  - 15
SP  - 4266-4272
EP  - 4266-4272
PB  - Elsevier science
SN  - 00406090
KW  - Ellipsometry
KW  - Optical properties
KW  - Low-k dielectrics
KW  - Porosity
KW  - Porogen residues
N2  - The optical properties of low dielectric constant (low-k) films have been determined by variable angle spectroscopic ellipsometry in the range from 2 eV to 9 eV to characterize the process of porogen removal during the UV-cure. The studied carbon doped oxide (SiCOH) porous dielectric films have been prepared by plasma enhanced chemical vapor deposition. The films have been deposited as a composition of a matrix precursor and an organic porogen. After deposition, the films have been cured by thermal annealing and UV irradiation (lambda = 172 urn) to remove the porogen and create a porosity of 33%, reaching a dielectric constant of 2.3. The process of porogen decomposition and removal has been studied on series of low-k samples. UV-cured for various times. Additional samples have been prepared by the deposition and curing of the porogen film, without SiCOH matrix, and the matrix material itself, without porogen. The analysis of the optical response of the porous dielectric as a mixture of matrix material, porogen and voids, together with Fourier transform infrared analysis, allows the sensitive detection of the volume of the porogen and indicates the existence of decomposed porogen residues inside the pores, even for long curing time. The variation of the deposition and curing conditions can control the amount of the porogen residues and the final porosity.
ER  -

MARŠÍK, Přemysl; P. VERDONCK; D. DE ROEST a M.R. BAKLANOV. Porogen residues detection in optical properties of low-k dielectrics cured by ultraviolet radiation. \textit{Thin Solid Films}. UK Oxford: Elsevier science, 2010, roč.~518, č.~15, s.~4266-4272. ISSN~0040-6090.

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