J 2011

Very low energy scanning electron microscopy in nanotechnology

MÜLLEROVÁ, Ilona; Miloš HOVORKA; Filip MIKA; Eliška MIKMEKOVÁ; Šárka MIKMEKOVÁ et al.

Základní údaje

Originální název

Very low energy scanning electron microscopy in nanotechnology

Autoři

MÜLLEROVÁ, Ilona; Miloš HOVORKA; Filip MIKA; Eliška MIKMEKOVÁ; Šárka MIKMEKOVÁ; Zuzana POKORNÁ a Luděk FRANK

Vydání

International Journal of Nanotechnology, ENGLAND, INDERSCIENCE ENTERPRISES LTD, 2011, 1475-7435

Další údaje

Jazyk

čeština

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Česká republika

Utajení

není předmětem státního či obchodního tajemství

Impakt faktor

Impact factor: 1.013

Označené pro přenos do RIV

Ne

Organizační jednotka

Přírodovědecká fakulta

Příznaky

Mezinárodní význam, Recenzováno
Změněno: 18. 3. 2011 16:13, Mgr. Miloš Hovorka, Ph.D.

Anotace

V originále

The group of low energy electron microscopy at ISI AS CR in Brno has developed a methodology for very low energy scanning electron microscopy at high image resolution by means of an immersion electrostatic lens (the cathode lens) inserted between the illumination column of a conventional scanning electron microscope and the sample. In this way the microscope resolution can be preserved down to a landing energy of the electrons one or even fractions of an electronvolt. In the range of less than several ten electronvolts the image signal generation processes include contrast mechanisms not met at higher energies, which respond to important features of the 3D inner potential of the target and visualize its local crystallinity as well as the electronic structure. The electron wavelength comparable with interatomic distances allows observation of various wave-optical phenomena in imaging. In addition, the cathode lens assembly secures acquisition of electrons backscattered from the sample at large angles with respect to the surface normal, which are abandoned in standard microscopes although they provide enhanced crystallinity information and surface sensitivity even at medium electron energies. The imaging method is described and illustrated with selected application examples.