2011
Very low energy scanning electron microscopy in nanotechnology
MÜLLEROVÁ, Ilona; Miloš HOVORKA; Filip MIKA; Eliška MIKMEKOVÁ; Šárka MIKMEKOVÁ et al.Základní údaje
Originální název
Very low energy scanning electron microscopy in nanotechnology
Autoři
MÜLLEROVÁ, Ilona; Miloš HOVORKA; Filip MIKA; Eliška MIKMEKOVÁ; Šárka MIKMEKOVÁ; Zuzana POKORNÁ a Luděk FRANK
Vydání
International Journal of Nanotechnology, ENGLAND, INDERSCIENCE ENTERPRISES LTD, 2011, 1475-7435
Další údaje
Jazyk
čeština
Typ výsledku
Článek v odborném periodiku
Obor
10302 Condensed matter physics
Stát vydavatele
Česká republika
Utajení
není předmětem státního či obchodního tajemství
Impakt faktor
Impact factor: 1.013
Označené pro přenos do RIV
Ne
Organizační jednotka
Přírodovědecká fakulta
UT WoS
Příznaky
Mezinárodní význam, Recenzováno
Změněno: 18. 3. 2011 16:13, Mgr. Miloš Hovorka, Ph.D.
Anotace
V originále
The group of low energy electron microscopy at ISI AS CR in Brno has developed a methodology for very low energy scanning electron microscopy at high image resolution by means of an immersion electrostatic lens (the cathode lens) inserted between the illumination column of a conventional scanning electron microscope and the sample. In this way the microscope resolution can be preserved down to a landing energy of the electrons one or even fractions of an electronvolt. In the range of less than several ten electronvolts the image signal generation processes include contrast mechanisms not met at higher energies, which respond to important features of the 3D inner potential of the target and visualize its local crystallinity as well as the electronic structure. The electron wavelength comparable with interatomic distances allows observation of various wave-optical phenomena in imaging. In addition, the cathode lens assembly secures acquisition of electrons backscattered from the sample at large angles with respect to the surface normal, which are abandoned in standard microscopes although they provide enhanced crystallinity information and surface sensitivity even at medium electron energies. The imaging method is described and illustrated with selected application examples.