Effect of ultraviolet curing wavelength on low-k dielectric
material properties and plasma damage resistance

J 2011

Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance

MARŠÍK, Přemysl, A. M. URBANOWICZ, P. VERDONCK, D. DE ROEST, H. SPREY et. al.

Základní údaje

Originální název

Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance

Název česky

Vliv vlnove delky ultrafialove kury na materialove vlastnosti low-k dielektrik a odolnost proti poskozeni plazmatem

Autoři

MARŠÍK, Přemysl (203 Česká republika, garant, domácí), A. M. URBANOWICZ (616 Polsko), P. VERDONCK (56 Belgie), D. DE ROEST (56 Belgie), H. SPREY (56 Belgie) a M. R. BAKLANOV (643 Rusko)

Vydání

Thin Solid Films, UK Oxford, Elsevier science, 2011, 0040-6090

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Velká Británie a Severní Irsko

Utajení

není předmětem státního či obchodního tajemství

Impakt faktor

Impact factor: 1.890

Kód RIV

RIV/00216224:14310/11:00052302

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1016/j.tsf.2011.01.339

UT WoS

000289333400030

Klíčová slova anglicky

Ellipsometry; Optical properties; Low-k dielectrics; Porosity; Porogen residues; Plasma damage

Štítky

AKR, rivok, ZR

Změněno: 20. 4. 2012 10:22, Ing. Andrea Mikešková

Anotace

V originále

A set of SiCOH low dielectric constant films (low-k) has been deposited by plasma enhanced chemical vapor deposition using variable flow rates of the porogen (sacrificial phase) and matrix precursors. During the deposition, two different substrate temperatures and radio frequency power settings were applied. Next, the deposited films were cured by the UV assisted annealing (UV-cure) using two industrial UV light sources: a monochromatic UV source with intensity maximum at gimel = 172 nm (lamp A) and a broadband UV source with intensity spectrum distributed below 200 nm (lamp B). This set of various low-k films has been additionally exposed to NH3 plasma (used for the CuOx reduction during Cu/low-k integration) in order to evaluate the effect of the film preparation conditions on the plasma damage resistance of low-k material. Results show that the choice of the UV-curing light source has significant impact on the chemical composition of the low-k material and modifies the porogen removal efficiency and subsequently the material porosity. The 172 nm photons from lamp A induce greater changes to most of the evaluated properties, particularly causing undesired removal of Si-CH3 groups and their replacement with Si-H. The softer broadband radiation from lamp B improves the porogen removal efficiency, leaving less porogen residues detected by spectroscopic ellipsometry in UV range. Furthermore, it was found that the degree of bulk hydrophilization (plasma damage) after NH3 plasma exposure is driven mainly by the film porosity.

Návaznosti

MSM0021622410, záměr

Název: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Fyzikální a chemické vlastnosti pokročilých materiálů a struktur

Citovat

MARŠÍK, Přemysl, A. M. URBANOWICZ, P. VERDONCK, D. DE ROEST, H. SPREY a M. R. BAKLANOV. Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance. Thin Solid Films. UK Oxford: Elsevier science, 2011, roč. 519, č. 11, s. 3619-3626. ISSN 0040-6090. Dostupné z: https://dx.doi.org/10.1016/j.tsf.2011.01.339.

@article{938213,
   author = {Maršík, Přemysl and Urbanowicz, A. M. and Verdonck, P. and De Roest, D. and Sprey, H. and Baklanov, M. R.},
   article_location = {UK Oxford},
   article_number = {11},
   doi = {http://dx.doi.org/10.1016/j.tsf.2011.01.339},
   keywords = {Ellipsometry; Optical properties; Low-k dielectrics; Porosity; Porogen residues; Plasma damage},
   language = {eng},
   issn = {0040-6090},
   journal = {Thin Solid Films},
   title = {Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance},
   volume = {519},
   year = {2011}
}

TY  - JOUR
ID  - 938213
AU  - Maršík, Přemysl - Urbanowicz, A. M. - Verdonck, P. - De Roest, D. - Sprey, H. - Baklanov, M. R.
PY  - 2011
TI  - Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance
JF  - Thin Solid Films
VL  - 519
IS  - 11
SP  - 3619-3626
EP  - 3619-3626
PB  - Elsevier science
SN  - 00406090
KW  - Ellipsometry
KW  - Optical properties
KW  - Low-k dielectrics
KW  - Porosity
KW  - Porogen residues
KW  - Plasma damage
N2  - A set of SiCOH low dielectric constant films (low-k) has been deposited by plasma enhanced chemical vapor deposition using variable flow rates of the porogen (sacrificial phase) and matrix precursors. During the deposition, two different substrate temperatures and radio frequency power settings were applied. Next, the deposited films were cured by the UV assisted annealing (UV-cure) using two industrial UV light sources: a monochromatic UV source with intensity maximum at gimel = 172 nm (lamp A) and a broadband UV source with intensity spectrum distributed below 200 nm (lamp B). This set of various low-k films has been additionally exposed to NH3 plasma (used for the CuOx reduction during Cu/low-k integration) in order to evaluate the effect of the film preparation conditions on the plasma damage resistance of low-k material. Results show that the choice of the UV-curing light source has significant impact on the chemical composition of the low-k material and modifies the porogen removal efficiency and subsequently the material porosity. The 172 nm photons from lamp A induce greater changes to most of the evaluated properties, particularly causing undesired removal of Si-CH3 groups and their replacement with Si-H. The softer broadband radiation from lamp B improves the porogen removal efficiency, leaving less porogen residues detected by spectroscopic ellipsometry in UV range. Furthermore, it was found that the degree of bulk hydrophilization (plasma damage) after NH3 plasma exposure is driven mainly by the film porosity.
ER  -

MARŠÍK, Přemysl, A. M. URBANOWICZ, P. VERDONCK, D. DE ROEST, H. SPREY a M. R. BAKLANOV. Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance. \textit{Thin Solid Films}. UK Oxford: Elsevier science, 2011, roč.~519, č.~11, s.~3619-3626. ISSN~0040-6090. Dostupné z: https://dx.doi.org/10.1016/j.tsf.2011.01.339.

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