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@proceedings{953493,
author = {Skácelová, Dana and Haničinec, Martin and Sťahel, Pavel and Černák, Mirko},
keywords = {Atmospheric pressure plasma DCSBD crystalline silicon wafer plasma activation plasma etching wettability},
language = {eng},
title = {Effect of plasma treatment on the surface morphology and wettability of (111) and (100) silicon wafers},
year = {2011}
}
TY - CONF
ID - 953493
AU - Skácelová, Dana - Haničinec, Martin - Sťahel, Pavel - Černák, Mirko
PY - 2011
TI - Effect of plasma treatment on the surface morphology and wettability of (111) and (100) silicon wafers
KW - Atmospheric pressure plasma DCSBD crystalline silicon wafer plasma activation plasma etching wettability
N2 - This paper is focused on the plasma treatment of silicon surface. The effect of plasma treatment in dependence of the different crystallographic orientation of silicon surface,(100) plane and (111) plane is compare
ER -
SKÁCELOVÁ, Dana, Martin HANIČINEC, Pavel SŤAHEL a Mirko ČERNÁK. \textit{Effect of plasma treatment on the surface morphology and wettability of (111) and (100) silicon wafers}. 2011.
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