| CAHA, Ondřej, Silvie BERNATOVÁ, Mojmír MEDUŇA, Milan SVOBODA a Jiří BURŠÍK. Study of oxide precipitates in silicon using X-ray diffraction techniques. physica status solidi (a), Applied research. Wiley-Blackwell, roč. 208, č. 11, s. 2587-2590. ISSN 1862-6300. doi:10.1002/pssa.201184263. 2011. |
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@article{964349,
author = {Caha, Ondřej and Bernatová, Silvie and Meduňa, Mojmír and Svoboda, Milan and Buršík, Jiří},
article_number = {11},
doi = {http://dx.doi.org/10.1002/pssa.201184263},
keywords = {CZOCHRALSKI-GROWN SILICON; DIFFUSE-SCATTERING; DEFECTS},
language = {eng},
issn = {1862-6300},
journal = {physica status solidi (a), Applied research},
title = {Study of oxide precipitates in silicon using X-ray diffraction techniques},
volume = {208},
year = {2011}
}
TY - JOUR
ID - 964349
AU - Caha, Ondřej - Bernatová, Silvie - Meduňa, Mojmír - Svoboda, Milan - Buršík, Jiří
PY - 2011
TI - Study of oxide precipitates in silicon using X-ray diffraction techniques
JF - physica status solidi (a), Applied research
VL - 208
IS - 11
SP - 2587-2590
EP - 2587-2590
PB - Wiley-Blackwell
SN - 18626300
KW - CZOCHRALSKI-GROWN SILICON
KW - DIFFUSE-SCATTERING
KW - DEFECTS
N2 - The results of a study of oxide precipitates in Czochralski (CZ) grown silicon using two X-ray diffraction methods are reported. The diffuse scattering around the Bragg diffraction maxima was measured on a series of samples after various two-stage annealing treatment. Combining the analysis of diffuse scattering with other experimental techniques we were able to determine mean precipitate size and deformation field around the precipitates. The obtained data show that the deformation field is proportional to the precipitate volume and independent on the annealing temperature or annealing time. The dynamical diffraction in Laue geometry was used to measure precipitate concentration. The results are compared to the selective etching concentration measurement.
ER -
CAHA, Ondřej, Silvie BERNATOVÁ, Mojmír MEDUŇA, Milan SVOBODA a Jiří BURŠÍK. Study of oxide precipitates in silicon using X-ray diffraction techniques. \textit{physica status solidi (a), Applied research}. Wiley-Blackwell, roč.~208, č.~11, s.~2587-2590. ISSN~1862-6300. doi:10.1002/pssa.201184263. 2011.
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