HOSPODKOVÁ, Alice, J. PANGRÁC, J. VYSKOČIL, J. OSWALD, A. VETUSHKA, Ondřej CAHA, P. HAZDRA, K. KULDOVÁ a E. HULICIUS. InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime. Journal of crystal growth. Amsterdam: Elsevier Science, 2011, roč. 317, č. 1, s. 39-42. ISSN 0022-0248. Dostupné z: https://dx.doi.org/10.1016/j.jcrysgro.2010.12.076. |
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@article{964350, author = {Hospodková, Alice and Pangrác, J. and Vyskočil, J. and Oswald, J. and Vetushka, A. and Caha, Ondřej and Hazdra, P. and Kuldová, K. and Hulicius, E.}, article_location = {Amsterdam}, article_number = {1}, doi = {http://dx.doi.org/10.1016/j.jcrysgro.2010.12.076}, keywords = {Low dimensional structures; Photoluminescence; Low-pressure metalorganic vapor phase epitaxy; InAs/GaAs quantum dots; Semiconducting III-V materials}, language = {eng}, issn = {0022-0248}, journal = {Journal of crystal growth}, title = {InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime}, volume = {317}, year = {2011} }
TY - JOUR ID - 964350 AU - Hospodková, Alice - Pangrác, J. - Vyskočil, J. - Oswald, J. - Vetushka, A. - Caha, Ondřej - Hazdra, P. - Kuldová, K. - Hulicius, E. PY - 2011 TI - InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime JF - Journal of crystal growth VL - 317 IS - 1 SP - 39-42 EP - 39-42 PB - Elsevier Science SN - 00220248 KW - Low dimensional structures KW - Photoluminescence KW - Low-pressure metalorganic vapor phase epitaxy KW - InAs/GaAs quantum dots KW - Semiconducting III-V materials N2 - InAs/GaAs quantum dot (QD) properties can be significantly influenced by the growth conditions of the QD capping layer. We have studied the effect of a group III partial pressure in the reactor on the QD capping process and on the QD photoluminescence when the capping layer is grown under the kinetically limited regime. Two types of capping layers were prepared: GaAs and InGaAs. The GaAs capping layer growth rate decrease did not influence QD dissolution, but increased the dissolution of big hillocks. Influence of the GaAs capping layer thickness on QD photoluminescence is also demonstrated. The composition of the ternary strain reducing InGaAs capping layer can be considerably changed depending on the V/III ratio under kinetically limited growth. ER -
HOSPODKOVÁ, Alice, J. PANGRÁC, J. VYSKOČIL, J. OSWALD, A. VETUSHKA, Ondřej CAHA, P. HAZDRA, K. KULDOVÁ a E. HULICIUS. InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime. \textit{Journal of crystal growth}. Amsterdam: Elsevier Science, 2011, roč.~317, č.~1, s.~39-42. ISSN~0022-0248. Dostupné z: https://dx.doi.org/10.1016/j.jcrysgro.2010.12.076.
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