| SCHMIDBAUER, Martin, Asli UGUR, C. WOLLSTEIN, Fariba HATAMI, Ferhat KATMIS, Ondřej CAHA a W. T. MASSELINK. Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs. Journal of Applied Physics. Melville, USA: American Institute of Physics, 2012, roč. 111, č. 2, s. "nestránkováno", 5 s. ISSN 0021-8979. Dostupné z: https://dx.doi.org/10.1063/1.3677995. |
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@article{972558,
author = {Schmidbauer, Martin and Ugur, Asli and Wollstein, C. and Hatami, Fariba and Katmis, Ferhat and Caha, Ondřej and Masselink, W. T.},
article_location = {Melville, USA},
article_number = {2},
doi = {http://dx.doi.org/10.1063/1.3677995},
keywords = {LAYERS; ENHANCEMENT; GAINP; DOTS},
language = {eng},
issn = {0021-8979},
journal = {Journal of Applied Physics},
title = {Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs},
url = {http://jap.aip.org/resource/1/japiau/v111/i2/p024306_s1?isAuthorized=no},
volume = {111},
year = {2012}
}
TY - JOUR
ID - 972558
AU - Schmidbauer, Martin - Ugur, Asli - Wollstein, C. - Hatami, Fariba - Katmis, Ferhat - Caha, Ondřej - Masselink, W. T.
PY - 2012
TI - Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs
JF - Journal of Applied Physics
VL - 111
IS - 2
SP - "nestránkováno"
EP - "nestránkováno"
PB - American Institute of Physics
SN - 00218979
KW - LAYERS
KW - ENHANCEMENT
KW - GAINP
KW - DOTS
UR - http://jap.aip.org/resource/1/japiau/v111/i2/p024306_s1?isAuthorized=no
L2 - http://jap.aip.org/resource/1/japiau/v111/i2/p024306_s1?isAuthorized=no
N2 - The nucleation of the one dimensional periodic surface corrugations that form during epitaxy along the [-110] direction on the In0.48Ga0.52 P lattice matched to (001) GaAs is investigated using x-ray diffuse scattering in the grazing incidence geometry.
ER -
SCHMIDBAUER, Martin, Asli UGUR, C. WOLLSTEIN, Fariba HATAMI, Ferhat KATMIS, Ondřej CAHA a W. T. MASSELINK. Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs. \textit{Journal of Applied Physics}. Melville, USA: American Institute of Physics, 2012, roč.~111, č.~2, s.~''nestránkováno'', 5 s. ISSN~0021-8979. Dostupné z: https://dx.doi.org/10.1063/1.3677995.
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