D 2011

ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS

HUMLÍČEK, Josef, Petr KLENOVSKÝ and Dominik MUNZAR

Basic information

Original name

ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS

Authors

HUMLÍČEK, Josef (203 Czech Republic, guarantor, belonging to the institution), Petr KLENOVSKÝ (203 Czech Republic, belonging to the institution) and Dominik MUNZAR (203 Czech Republic, belonging to the institution)

Edition

SLEZSKA, 3rd International Conference on NANOCON, p. 39-44, 6 pp. 2011

Publisher

TANGER LTD

Other information

Language

English

Type of outcome

Stať ve sborníku

Field of Study

10302 Condensed matter physics

Country of publisher

Czech Republic

Confidentiality degree

není předmětem státního či obchodního tajemství

Publication form

storage medium (CD, DVD, flash disk)

RIV identification code

RIV/00216224:14740/11:00057585

Organization unit

Central European Institute of Technology

ISBN

978-80-87294-27-7

UT WoS

000306686700005

Keywords in English

quantum dots; GaAs; InAs; GaAsSb

Tags

Tags

International impact, Reviewed
Změněno: 16/4/2013 09:47, Olga Křížová

Abstract

V originále

The electronic structure of InAs quantum dots (QD) self assembled on GaAs and covered with the GaAs(1-y) Sb(y) strain reducing layer displays several interesting features, depending on the geometry and the composition of the ternary material. The basic motivation is the possible lowering of the emission energy towards the prominent communication bands of 1.3 and 1.55 microns. Using the envelope function theory, we investigate the localization of electrons and holes. The most remarkable finding is the localization of holes outside InAs, close to the base of the dot, for larger value of the Sb content. Thus, typeII molecular-like states are formed as the results of the strain and piezoelectric fields. The parameters of the ternary layer play a crucial role in forming the properties of the QD structures; some of them cannot be easily obtained by X-ray techniques. For this reason, we explore the possibility of efficient characterization of the very thin ternary layers in the QD heterostructures using VIS-UV reflectance spectra, and compare the results with those obtained by using X-rays.

Links

GA202/09/0676, research and development project
Name: Vliv krycích vrstev na elektronové stavy v kvantových tečkách
Investor: Czech Science Foundation
MSM0021622410, plan (intention)
Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures