The hydrogen effusion induced structural changes and defects in
hydrogenated amorphous SiGe films: dependence upon the
microstructure

J 1998

The hydrogen effusion induced structural changes and defects in hydrogenated amorphous SiGe films: dependence upon the microstructure

SLÁDEK, Petr, Pavel SŤAHEL, ML THEYE a Pere ROCA I CABARROCAS

Základní údaje

Originální název

The hydrogen effusion induced structural changes and defects in hydrogenated amorphous SiGe films: dependence upon the microstructure

Autoři

SLÁDEK, Petr, Pavel SŤAHEL, ML THEYE a Pere ROCA I CABARROCAS

Vydání

Journal of Non-Crystalline Solids, Nizozemsko, Elsevier Science B.V. 1998, 0022-3093

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Nizozemské království

Utajení

není předmětem státního či obchodního tajemství

Impakt faktor

Impact factor: 1.062

Organizační jednotka

Pedagogická fakulta

DOI

http://dx.doi.org/10.1016/S0022-3093(98)00186-0

UT WoS

000074643400090

Klíčová slova anglicky

hydrogen; SiGe; hydrogen effusion

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 3. 2. 2020 16:07, Dana Nesnídalová

Anotace

V originále

To better understand the relations between deposition conditions, microstructure, H incorporation and the optoelectronics properties of undoped a-Si(1-x)Ge(x):H alloys, we performed a comparative study of samples (with x approximate to 0.5) prepared by plasma enhanced chemical vapour deposition at total pressures varying from 900 to 2200 mTorr. The hydrogen bonding, detected by infra-red absorption measurements and H thermal desorption experiments, as well as the optoelectronic properties, determined by a combination of standard optical and photothermal deflection spectroscopy measurements, were found to depend on the total pressure. The results obtained in the as-deposited state and after annealing at increasing temperatures are analysed as a whole in terms of specific local H bonding environment, degree of order, and defects. (C) 1998 Elsevier Science B.V. All rights reserved.

Citovat

SLÁDEK, Petr, Pavel SŤAHEL, ML THEYE a Pere ROCA I CABARROCAS. The hydrogen effusion induced structural changes and defects in hydrogenated amorphous SiGe films: dependence upon the microstructure. Journal of Non-Crystalline Solids. Nizozemsko: Elsevier Science B.V., 1998, roč. 227, PART 1, s. 437-441. ISSN 0022-3093. Dostupné z: https://dx.doi.org/10.1016/S0022-3093(98)00186-0.

@article{1616966,
   author = {Sládek, Petr and Sťahel, Pavel and Theye, ML and ROCA I CABARROCAS, Pere},
   article_location = {Nizozemsko},
   article_number = {PART 1},
   doi = {http://dx.doi.org/10.1016/S0022-3093(98)00186-0},
   keywords = {hydrogen; SiGe; hydrogen effusion},
   language = {eng},
   issn = {0022-3093},
   journal = {Journal of Non-Crystalline Solids},
   title = {The hydrogen effusion induced structural changes and defects in hydrogenated amorphous SiGe films: dependence upon the microstructure},
   volume = {227},
   year = {1998}
}

TY  - JOUR
ID  - 1616966
AU  - Sládek, Petr - Sťahel, Pavel - Theye, ML - ROCA I CABARROCAS, Pere
PY  - 1998
TI  - The hydrogen effusion induced structural changes and defects in hydrogenated amorphous SiGe films: dependence upon the microstructure
JF  - Journal of Non-Crystalline Solids
VL  - 227
IS  - PART 1
SP  - 437-441
EP  - 437-441
PB  - Elsevier Science B.V.
SN  - 00223093
KW  - hydrogen
KW  - SiGe
KW  - hydrogen effusion
N2  - To better understand the relations between deposition conditions, microstructure, H incorporation and the optoelectronics properties of undoped a-Si(1-x)Ge(x):H alloys, we performed a comparative study of samples (with x approximate to 0.5) prepared by plasma enhanced chemical vapour deposition at total pressures varying from 900 to 2200 mTorr. The hydrogen bonding, detected by infra-red absorption measurements and H thermal desorption experiments, as well as the optoelectronic properties, determined by a combination of standard optical and photothermal deflection spectroscopy measurements, were found to depend on the total pressure. The results obtained in the as-deposited state and after annealing at increasing temperatures are analysed as a whole in terms of specific local H bonding environment, degree of order, and defects. (C) 1998 Elsevier Science B.V. All rights reserved.
ER  -

SLÁDEK, Petr, Pavel SŤAHEL, ML THEYE a Pere ROCA I CABARROCAS. The hydrogen effusion induced structural changes and defects in hydrogenated amorphous SiGe films: dependence upon the microstructure. \textit{Journal of Non-Crystalline Solids}. Nizozemsko: Elsevier Science B.V., 1998, roč.~227, PART 1, s.~437-441. ISSN~0022-3093. Dostupné z: https://dx.doi.org/10.1016/S0022-3093(98)00186-0.

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