Defect states in the intrinsic layer of amorphous silicon solar
cells studied by the Constant Photocurrent Method

J 1998

Defect states in the intrinsic layer of amorphous silicon solar cells studied by the Constant Photocurrent Method

SLÁDEK, Petr; Pavel SŤAHEL; Pere ROCA I CABARROCAS a Philip MORIN

Základní údaje

Originální název

Defect states in the intrinsic layer of amorphous silicon solar cells studied by the Constant Photocurrent Method

Autoři

SLÁDEK, Petr; Pavel SŤAHEL; Pere ROCA I CABARROCAS a Philip MORIN

Vydání

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, London, England, TAYLOR & FRANCIS LTD, 1998, 0141-8637

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Velká Británie a Severní Irsko

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 1.241

Označené pro přenos do RIV

Ano

Organizační jednotka

Pedagogická fakulta

Klíčová slova anglicky

amorphous silicon; solar cells; CPM

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 3. 2. 2020 15:49, Dana Nesnídalová

Anotace

V originále

The constant-photocurrent method (CPM), which has been widely used for the study of the defect density in the gap of hydrogenated amorphous silicon (a-Si:H) films, is applied to study the defect density in the intrinsic layer of a-Si:H-based solar cells. The analysis of the CPM-derived absorption spectrum in p-i-n devices indicates that reliable measurements can be performed under short-circuit or reverse-bias conditions. In these conditions the CPM measurement is limited by the transport of holes and therefore is a good indicator of the quality of the intrinsic layer. Moreover, we show that CPM is sensitive to that part of the i layer in which the Fermi level is around midgap. Comparison of CPM spectra in films and cells is used to determine the conditions under which the measurements in the solar cell are relative to the properties of the intrinsic layer or sensitive to interface effects. Deconvolution of the CPM spectrum according to a standard model of the defect density distribution in a-Si:H yields similar values of the defect density and disorder parameter for films and devices deposited under the same conditions.

Citovat

SLÁDEK, Petr; Pavel SŤAHEL; Pere ROCA I CABARROCAS a Philip MORIN. Defect states in the intrinsic layer of amorphous silicon solar cells studied by the Constant Photocurrent Method. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES. London, England: TAYLOR & FRANCIS LTD, 1998, roč. 77, č. 4, s. 1049-1061. ISSN 0141-8637. Dostupné z: https://doi.org/10.1080/13642819808206404.

@article{202654,
   author = {Sládek, Petr and Sťahel, Pavel and Roca i Cabarrocas, Pere and Morin, Philip},
   article_location = {London, England},
   article_number = {4},
   doi = {https://doi.org/10.1080/13642819808206404},
   keywords = {amorphous silicon; solar cells; CPM},
   language = {eng},
   issn = {0141-8637},
   journal = {PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES},
   title = {Defect states in the intrinsic layer of amorphous silicon solar cells studied by the Constant Photocurrent Method},
   url = {http://dx.doi.org/10.1080/13642819808206404},
   volume = {77},
   year = {1998}
}

TY  - JOUR
ID  - 202654
AU  - Sládek, Petr - Sťahel, Pavel - Roca i Cabarrocas, Pere - Morin, Philip
PY  - 1998
TI  - Defect states in the intrinsic layer of amorphous silicon solar cells studied by the Constant Photocurrent Method
JF  - PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
VL  - 77
IS  - 4
SP  - 1049-1061
EP  - 1049-1061
PB  - TAYLOR & FRANCIS LTD
SN  - 01418637
KW  - amorphous silicon
KW  - solar cells
KW  - CPM
UR  - http://dx.doi.org/10.1080/13642819808206404
L2  - http://dx.doi.org/10.1080/13642819808206404
N2  - The constant-photocurrent method (CPM), which has been widely used for the study of the defect density in the gap of hydrogenated amorphous silicon (a-Si:H) films, is applied to study the defect density in the intrinsic layer of a-Si:H-based solar cells. The analysis of the CPM-derived absorption spectrum in p-i-n devices indicates that reliable measurements can be performed under short-circuit or reverse-bias conditions. In these conditions the CPM measurement is limited by the transport of holes and therefore is a good indicator of the quality of the intrinsic layer. Moreover, we show that CPM is sensitive to that part of the i layer in which the Fermi level is around midgap. Comparison of CPM spectra in films and cells is used to determine the conditions under which the measurements in the solar cell are relative to the properties of the intrinsic layer or sensitive to interface effects. Deconvolution of the CPM spectrum according to a standard model of the defect density distribution in a-Si:H yields similar values of the defect density and disorder parameter for films and devices deposited under the same conditions.
ER  -

SLÁDEK, Petr; Pavel SŤAHEL; Pere ROCA I CABARROCAS a Philip MORIN. Defect states in the intrinsic layer of amorphous silicon solar cells studied by the Constant Photocurrent Method. \textit{PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES}. London, England: TAYLOR \&{} FRANCIS LTD, 1998, roč.~77, č.~4, s.~1049-1061. ISSN~0141-8637. Dostupné z: https://doi.org/10.1080/13642819808206404.

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