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@inproceedings{357512,
author = {Sládek, Petr and Sťahel, Pavel and Šťastný, Jiří and Přikryl, Radek},
address = {Brno},
booktitle = {Electronic Devices and Systems Y2K},
edition = {první},
keywords = {Light scattering; Si thin film ; Photocurrent},
language = {eng},
location = {Brno},
isbn = {80-214-1780-3},
pages = {202-206},
publisher = {ing. Zdeněk Novotný CSc.},
title = {MODIFICATIONS OF THE OPTICAL PARAMETERS OF THE SILICON THIN FILMS DUE TO THE LIGHT SCATTERING},
year = {2000}
}
TY - JOUR
ID - 357512
AU - Sládek, Petr - Sťahel, Pavel - Šťastný, Jiří - Přikryl, Radek
PY - 2000
TI - MODIFICATIONS OF THE OPTICAL PARAMETERS OF THE SILICON THIN FILMS DUE TO THE LIGHT SCATTERING
PB - ing. Zdeněk Novotný CSc.
CY - Brno
SN - 8021417803
KW - Light scattering
KW - Si thin film
KW - Photocurrent
N2 - We use photocurrent and photothermal deflection spectroscopies to study defects in amorphous, polymorphous and microcrystalline Si thin films. Enhanced light absorption in mc-Si, nc-Si and pm-Si films is due to the several contributions, one of which is the light scattering. For the estimation of the influence of the light scattering on the standard CPM measurements we use the innovation method of the "outside" induced excess current, when the probing beam is impinging outside the region with the electric field (between electrodes).
ER -
SLÁDEK, Petr, Pavel SŤAHEL, Jiří ŠŤASTNÝ a Radek PŘIKRYL. MODIFICATIONS OF THE OPTICAL PARAMETERS OF THE SILICON THIN FILMS DUE TO THE LIGHT SCATTERING. In \textit{Electronic Devices and Systems Y2K}. první. Brno: ing. Zdeněk Novotný CSc., 2000, s.~202-206. ISBN~80-214-1780-3.
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