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@inproceedings{357512, author = {Sládek, Petr and Sťahel, Pavel and Šťastný, Jiří and Přikryl, Radek}, address = {Brno}, booktitle = {Electronic Devices and Systems Y2K}, edition = {první}, keywords = {Light scattering; Si thin film ; Photocurrent}, language = {eng}, location = {Brno}, isbn = {80-214-1780-3}, pages = {202-206}, publisher = {ing. Zdeněk Novotný CSc.}, title = {MODIFICATIONS OF THE OPTICAL PARAMETERS OF THE SILICON THIN FILMS DUE TO THE LIGHT SCATTERING}, year = {2000} }
TY - JOUR ID - 357512 AU - Sládek, Petr - Sťahel, Pavel - Šťastný, Jiří - Přikryl, Radek PY - 2000 TI - MODIFICATIONS OF THE OPTICAL PARAMETERS OF THE SILICON THIN FILMS DUE TO THE LIGHT SCATTERING PB - ing. Zdeněk Novotný CSc. CY - Brno SN - 8021417803 KW - Light scattering KW - Si thin film KW - Photocurrent N2 - We use photocurrent and photothermal deflection spectroscopies to study defects in amorphous, polymorphous and microcrystalline Si thin films. Enhanced light absorption in mc-Si, nc-Si and pm-Si films is due to the several contributions, one of which is the light scattering. For the estimation of the influence of the light scattering on the standard CPM measurements we use the innovation method of the "outside" induced excess current, when the probing beam is impinging outside the region with the electric field (between electrodes). ER -
SLÁDEK, Petr, Pavel SŤAHEL, Jiří ŠŤASTNÝ a Radek PŘIKRYL. MODIFICATIONS OF THE OPTICAL PARAMETERS OF THE SILICON THIN FILMS DUE TO THE LIGHT SCATTERING. In \textit{Electronic Devices and Systems Y2K}. první. Brno: ing. Zdeněk Novotný CSc., 2000, s.~202-206. ISBN~80-214-1780-3.
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