| MIKULÍK, Petr, T. BAUMBACH, D. KORYTÁR, P. PERNOT, D. LÜBBERT, L. HELFEN a Ch. LANDESBERGER. Advanced X-ray diffraction imaging techniques for semiconductor wafer characterisation. Materials Structure. Praha: The Czech and Slovak Cryst. Assoc., 2002, roč. 9, č. 2, s. 87-88. ISSN 1211-5894. |
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@article{486967,
author = {Mikulík, Petr and Baumbach, T. and Korytár, D. and Pernot, P. and Lübbert, D. and Helfen, L. and Landesberger, Ch.},
article_location = {Praha},
article_number = {2},
keywords = {wafers; defects; x-ray scattering; diffraction; imaging; silicon; GaAs},
language = {eng},
issn = {1211-5894},
journal = {Materials Structure},
title = {Advanced X-ray diffraction imaging techniques for semiconductor wafer characterisation},
url = {http://www.sci.muni.cz/~mikulik/Publications.html#MikulikBaumbachKorytarPLHL-MatStruct-2002},
volume = {9},
year = {2002}
}
TY - JOUR
ID - 486967
AU - Mikulík, Petr - Baumbach, T. - Korytár, D. - Pernot, P. - Lübbert, D. - Helfen, L. - Landesberger, Ch.
PY - 2002
TI - Advanced X-ray diffraction imaging techniques for semiconductor wafer characterisation
JF - Materials Structure
VL - 9
IS - 2
SP - 87-88
EP - 87-88
PB - The Czech and Slovak Cryst. Assoc.
SN - 12115894
KW - wafers
KW - defects
KW - x-ray scattering
KW - diffraction
KW - imaging
KW - silicon
KW - GaAs
UR - http://www.sci.muni.cz/~mikulik/Publications.html#MikulikBaumbachKorytarPLHL-MatStruct-2002
N2 - Wafer quality inspection and defect analysis are crucial for improvements of the wafer fabrication technology as well as for the correlation of device properties with the processes of wafer treating. This work demonstrates trends of high-resolution X-ray diffraction imaging techniques with synchrotron radiation sources and their capability for detailed quality inspection of wafers concerning their structural perfection. We apply these methods to visualise and to characterise the defects and deformations induced by growing, cutting, grinding, etching and gluing in the production of semiconductor wafers (in particular Si and GaAs wafers) and in ultra-thin wafers. We present synchrotron topography and synchrotron area diffractometry methods to analyse qualitatively and quantitatively: dislocations and lineages, micro-defects and micro-cracks, wafer tilts and warpages, tensors of local lattice rotations.
ER -
MIKULÍK, Petr, T. BAUMBACH, D. KORYTÁR, P. PERNOT, D. LÜBBERT, L. HELFEN a Ch. LANDESBERGER. Advanced X-ray diffraction imaging techniques for semiconductor wafer characterisation. \textit{Materials Structure}. Praha: The Czech and Slovak Cryst. Assoc., 2002, roč.~9, č.~2, s.~87-88. ISSN~1211-5894.
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