Synchrotron area diffractometry as a tool for spatial
high-resolution three-dimensional lattice misorientation
mapping

J 2003

Synchrotron area diffractometry as a tool for spatial high-resolution three-dimensional lattice misorientation mapping

MIKULÍK, Petr, D. LÜBBERT, D. KORYTÁR, P. PERNOT, T. BAUMBACH et. al.

Základní údaje

Originální název

Synchrotron area diffractometry as a tool for spatial high-resolution three-dimensional lattice misorientation mapping

Autoři

MIKULÍK, Petr (203 Česká republika, garant), D. LÜBBERT (276 Německo), D. KORYTÁR (703 Slovensko), P. PERNOT (203 Česká republika) a T. BAUMBACH (276 Německo)

Vydání

J. Phys. D: Appl. Phys. Velká Britanie, IOP Publishing Ltd, 2003, 0022-3727

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Velká Británie a Severní Irsko

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 1.265

Kód RIV

RIV/00216224:14310/03:00008735

Organizační jednotka

Přírodovědecká fakulta

Klíčová slova anglicky

diffraction; wafers; defects; GaAs; X-ray diffraction; lattice tilt

Štítky

defects, diffraction, GAAS, lattice tilt, wafers, X-ray diffraction

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 12. 2. 2007 18:35, doc. RNDr. Petr Mikulík, Ph.D.

Anotace

V originále

Wafer quality inspection and defect analysis are crucial for improvements of the wafer fabrication technology as well as for the correlation of device properties with the processes of wafer treating. This work demonstrates trends of high-resolution X-ray diffraction imaging techniques with synchrotron radiation sources and their capability for detailed quality inspection of wafers concerning their structural perfection. We apply these methods to visualise and to characterise the defects and deformations induced by growing, cutting, grinding, etching and gluing in the production of semiconductor wafers (in particular Si and GaAs wafers) and in ultra-thin wafers. We present synchrotron topography and synchrotron area diffractometry methods to analyse qualitatively and quantitatively: dislocations and lineages, micro-defects and micro-cracks, wafer tilts and warpages, tensors of local lattice rotations.

Návaznosti

MSM 143100002, záměr

Název: Fyzikální vlastnosti nových materiálů a vrstevnatých struktur

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Fyzikální vlastnosti nových materiálů a vrstevnatých struktur

Citovat

MIKULÍK, Petr, D. LÜBBERT, D. KORYTÁR, P. PERNOT a T. BAUMBACH. Synchrotron area diffractometry as a tool for spatial high-resolution three-dimensional lattice misorientation mapping. J. Phys. D: Appl. Phys. Velká Britanie: IOP Publishing Ltd, 2003, roč. 36, č. 1, s. A74-A78, 5 s. ISSN 0022-3727.

@article{486969,
   author = {Mikulík, Petr and Lübbert, D. and Korytár, D. and Pernot, P. and Baumbach, T.},
   article_location = {Velká Britanie},
   article_number = {1},
   keywords = {diffraction; wafers; defects; GaAs; X-ray diffraction; lattice tilt},
   language = {eng},
   issn = {0022-3727},
   journal = {J. Phys. D: Appl. Phys.},
   title = {Synchrotron area diffractometry as a tool for spatial high-resolution three-dimensional lattice misorientation mapping},
   url = {http://www.sci.muni.cz/~mikulik/Publications.html#MikulikBaumbachKorytarPLHL-MatStruct-2002},
   volume = {36},
   year = {2003}
}

TY  - JOUR
ID  - 486969
AU  - Mikulík, Petr - Lübbert, D. - Korytár, D. - Pernot, P. - Baumbach, T.
PY  - 2003
TI  - Synchrotron area diffractometry as a tool for spatial high-resolution three-dimensional lattice misorientation mapping
JF  - J. Phys. D: Appl. Phys.
VL  - 36
IS  - 1
SP  - A74-A78
EP  - A74-A78
PB  - IOP Publishing Ltd
SN  - 00223727
KW  - diffraction
KW  - wafers
KW  - defects
KW  - GaAs
KW  - X-ray diffraction
KW  - lattice tilt
UR  - http://www.sci.muni.cz/~mikulik/Publications.html#MikulikBaumbachKorytarPLHL-MatStruct-2002
N2  - Wafer quality inspection and defect analysis are crucial for improvements of the wafer fabrication technology as well as for the correlation of device properties with the processes of wafer treating. This work demonstrates trends of high-resolution X-ray diffraction imaging techniques with synchrotron radiation sources and their capability for detailed quality inspection of wafers concerning their structural perfection. We apply these methods to visualise and to characterise the defects and deformations induced by growing, cutting, grinding, etching and gluing in the production of semiconductor wafers (in particular Si and GaAs wafers) and in ultra-thin wafers. We present synchrotron topography and synchrotron area diffractometry methods to analyse qualitatively and quantitatively: dislocations and lineages, micro-defects and micro-cracks, wafer tilts and warpages, tensors of local lattice rotations.
ER  -

MIKULÍK, Petr, D. LÜBBERT, D. KORYTÁR, P. PERNOT a T. BAUMBACH. Synchrotron area diffractometry as a tool for spatial high-resolution three-dimensional lattice misorientation mapping. \textit{J. Phys. D: Appl. Phys.}. Velká Britanie: IOP Publishing Ltd, 2003, roč.~36, č.~1, s.~A74-A78, 5 s. ISSN~0022-3727.

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