| KRÁĽ, Martin, Andrej BUČEK, Miroslav ZÁHORAN, Mirko ČERNÁK, Jaroslav RUSNÁK a Emil PINČÍK. On Formation of Very Thin SiO2/a-Si:H/c-Si Structures by Plasma Immersion Ion Implantation and Dielectric Barrier Discharge. In Proc. SREN 2005. 1. vyd. Itálie: U, 2005, s. 47-48. ISBN 80-223-2045-5. |
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@inproceedings{599311,
author = {Kráľ, Martin and Buček, Andrej and Záhoran, Miroslav and Černák, Mirko and Rusnák, Jaroslav and Pinčík, Emil},
address = {Itálie},
booktitle = {Proc. SREN 2005},
edition = {1},
language = {eng},
location = {Itálie},
isbn = {80-223-2045-5},
pages = {47-48},
publisher = {U},
title = {On Formation of Very Thin SiO2/a-Si:H/c-Si Structures by Plasma Immersion Ion Implantation and Dielectric Barrier Discharge},
year = {2005}
}
TY - JOUR
ID - 599311
AU - Kráľ, Martin - Buček, Andrej - Záhoran, Miroslav - Černák, Mirko - Rusnák, Jaroslav - Pinčík, Emil
PY - 2005
TI - On Formation of Very Thin SiO2/a-Si:H/c-Si Structures by Plasma Immersion Ion Implantation and Dielectric Barrier Discharge
PB - U
CY - Itálie
SN - 8022320455
N2 - On Formation of Very Thin SiO2/a-Si:H/c-Si Structures by Plasma Immersion Ion Implantation and Dielectric Barrier Discharge
ER -
KRÁĽ, Martin, Andrej BUČEK, Miroslav ZÁHORAN, Mirko ČERNÁK, Jaroslav RUSNÁK a Emil PINČÍK. On Formation of Very Thin SiO2/a-Si:H/c-Si Structures by Plasma Immersion Ion Implantation and Dielectric Barrier Discharge. In \textit{Proc. SREN 2005}. 1. vyd. Itálie: U, 2005, s.~47-48. ISBN~80-223-2045-5.
|
