2006
1.3 mum emission from InAs/GaAs quantum dots
KULDOVÁ, Karla; Vlastimil KŘÁPEK; Alice HOSPODKOVÁ; Jiří OSWALD; Jiří PANGRÁC et al.Základní údaje
Originální název
1.3 mum emission from InAs/GaAs quantum dots
Název česky
Emise na 1.3 mikrometru z InAs/GaAs kvantových teček
Autoři
KULDOVÁ, Karla; Vlastimil KŘÁPEK; Alice HOSPODKOVÁ; Jiří OSWALD; Jiří PANGRÁC; Karel MELICHAR; Eduard HULICIUS; Marek POTEMSKI a Josef HUMLÍČEK
Vydání
physica status solidi (c), Weinheim, WILEY-VCH Verlag GmbH, 2006, 1610-1642
Další údaje
Jazyk
angličtina
Typ výsledku
Článek v odborném periodiku
Obor
10302 Condensed matter physics
Stát vydavatele
Nizozemské království
Utajení
není předmětem státního či obchodního tajemství
Označené pro přenos do RIV
Ano
Kód RIV
RIV/00216224:14310/06:00018456
Organizační jednotka
Přírodovědecká fakulta
Klíčová slova anglicky
quantum dots; InAs/GaAs; magnetophotoluminescence
Příznaky
Mezinárodní význam, Recenzováno
Změněno: 9. 4. 2010 15:48, prof. RNDr. Josef Humlíček, CSc.
V originále
We report here the results of our photoluminescence study of a series of single quantum dot layer structures containing InxGa1–xAs strain reducing layers with different In concentration (from 0 % to 29 %), prepared by low pressure metal organic vapour phase epitaxy. These structures display a strong red shift of photoluminescence maxima from 1.25 mum to 1.45 mum at 300 K with increased In content in the ternary layer. The origin of the observed transitions has been explained using magnetophotoluminescence measurements and photoluminescence measurements for different pumping intensities at low temperature. Optical transition energies were calculated using a simple single-band effective mass model with energydependent effective mass. Comparing the calculated and measured energies, we can determine the thickness of the wetting layer and the sizes of the dots.
Česky
We report here the results of our photoluminescence study of a series of single quantum dot layer structures containing InxGa1–xAs strain reducing layers with different In concentration (from 0 % to 29 %), prepared by low pressure metal organic vapour phase epitaxy. These structures display a strong red shift of photoluminescence maxima from 1.25 mum to 1.45 mum at 300 K with increased In content in the ternary layer. The origin of the observed transitions has been explained using magnetophotoluminescence measurements and photoluminescence measurements for different pumping intensities at low temperature. Optical transition energies were calculated using a simple single-band effective mass model with energydependent effective mass. Comparing the calculated and measured energies, we can determine the thickness of the wetting layer and the sizes of the dots.
Návaznosti
| GA202/06/0718, projekt VaV |
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| KJB101630601, projekt VaV |
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| MSM0021622410, záměr |
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