2008
Optical Property Changes in Low-k Films upon Ultraviolet-Assisted Curing
ESLAVA, Salvador; Guillaume EYMERY; Přemysl MARŠÍK; Francesca IACOPI; Christine KIRSCHHOCK et. al.Základní údaje
Originální název
Optical Property Changes in Low-k Films upon Ultraviolet-Assisted Curing
Název česky
Změny optických vlastností low-k filmů v průběhu UV kůry
Autoři
ESLAVA, Salvador; Guillaume EYMERY; Přemysl MARŠÍK; Francesca IACOPI; Christine KIRSCHHOCK; Karen MAEX; Johan MARTENS a Mikhail BAKLANOV
Vydání
Journal of the electrochemical society, New York, The Electrochemical Society, 2008, 0013-4651
Další údaje
Jazyk
angličtina
Typ výsledku
Článek v odborném periodiku
Obor
10302 Condensed matter physics
Stát vydavatele
Belgie
Utajení
není předmětem státního či obchodního tajemství
Impakt faktor
Impact factor: 2.437
Kód RIV
RIV/00216224:14310/08:00026015
Organizační jednotka
Přírodovědecká fakulta
UT WoS
000254779700057
Klíčová slova anglicky
low-k; ellipsometry; UV-cure
Štítky
Příznaky
Mezinárodní význam, Recenzováno
Změněno: 9. 7. 2009 09:58, Mgr. Přemysl Maršík, Ph.D.
V originále
Ultraviolet-assisted curing (UV curing) has been recently applied to enhance the mechanical properties of low-k films. Knowledge about which ultraviolet energies are most effective is still limited and the consequences of applying the UV-curing process to integrated stacks in on-chip interconnects unknown. To clarify these open questions we investigated the optical properties of a SiCOH low-k layer by purged ultraviolet spectroscopic ellipsometry in the energy region 2-9 eV. The complex refractive index of the low-k film shows an absorption edge with a superimposed absorption band at 6.4 eV that vanishes upon ultraviolet-assisted curing. Comparison with Fourier transform infrared transmission demonstrates that the absorption at 6.4 eV must be attributed to the organic porogens, which have also influences on the absorption edge.
Česky
Ultraviolet-assisted curing (UV curing) has been recently applied to enhance the mechanical properties of low-k films. Knowledge about which ultraviolet energies are most effective is still limited and the consequences of applying the UV-curing process to integrated stacks in on-chip interconnects unknown. To clarify these open questions we investigated the optical properties of a SiCOH low-k layer by purged ultraviolet spectroscopic ellipsometry in the energy region 2-9 eV. The complex refractive index of the low-k film shows an absorption edge with a superimposed absorption band at 6.4 eV that vanishes upon ultraviolet-assisted curing. Comparison with Fourier transform infrared transmission demonstrates that the absorption at 6.4 eV must be attributed to the organic porogens, which have also influences on the absorption edge.
Návaznosti
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