2008
Optical characterization of phase changing Ge2Sb2Te5 chalcogenide films
FRANTA, Daniel; Martin HRDLIČKA; David NEČAS; Miloslav FRUMAR; Ivan OHLÍDAL et. al.Základní údaje
Originální název
Optical characterization of phase changing Ge2Sb2Te5 chalcogenide films
Název česky
Optická charakterizace fázově měnitelných Ge2Sb2Te5 chalkogenidových filmů
Autoři
FRANTA, Daniel; Martin HRDLIČKA; David NEČAS; Miloslav FRUMAR; Ivan OHLÍDAL a Martin PAVLIŠTA
Vydání
physica status solidi (c), Weinheim, WILEY-VCH Verlag GmbH, 2008, 1610-1634
Další údaje
Jazyk
angličtina
Typ výsledku
Článek v odborném periodiku
Obor
10302 Condensed matter physics
Stát vydavatele
Německo
Utajení
není předmětem státního či obchodního tajemství
Kód RIV
RIV/00216224:14310/08:00025067
Organizační jednotka
Přírodovědecká fakulta
UT WoS
000256862500078
Klíčová slova anglicky
thin-films; thermal-stability; dispersion model; rough surfaces; optical constants
Příznaky
Mezinárodní význam, Recenzováno
Změněno: 3. 7. 2009 09:37, Mgr. Daniel Franta, Ph.D.
V originále
The variable angle spectroscopic ellipsometry and spectroscopic reflectometry is used for the optical characterization of the as-deposited and annealed Ge2Sb2Te5 (GST) films. The dispersion model of the GST films is based on the parameterization of the density of electronic states. As a consequence of annealing, roughness of the upper boundaries of the GST films originates. This annealing also causes the evident redistribution of the density of electronic states from the higher energies to lower energies. The roughening and redistribution of the electrons are explained by means of the phase change of the GST films from amorphous to polycrystalline structure. This phase change is accompanied by changing the conductivity of the films that was proved by introducing the terms of the free carriers in the dispersion model of the CST films.
Česky
The variable angle spectroscopic ellipsometry and spectroscopic reflectometry is used for the optical characterization of the as-deposited and annealed Ge2Sb2Te5 (GST) films. The dispersion model of the GST films is based on the parameterization of the density of electronic states. As a consequence of annealing, roughness of the upper boundaries of the GST films originates. This annealing also causes the evident redistribution of the density of electronic states from the higher energies to lower energies. The roughening and redistribution of the electrons are explained by means of the phase change of the GST films from amorphous to polycrystalline structure. This phase change is accompanied by changing the conductivity of the films that was proved by introducing the terms of the free carriers in the dispersion model of the CST films.
Návaznosti
| GA203/05/0524, projekt VaV |
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| MSM0021622411, záměr |
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